Loading...

BB241TRL13

NXP Semiconductors

BB241TRL13 by NXP Semiconductors

BB241TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 21, comes in a round glass package, and supports surface mount technology. Ideal for RF tuning and voltage-controlled oscillators.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,103 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,103

-

-

-

-

Digiode

USA . 2,470 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,470

-

-

-

-

Anansix

USA . 2,081 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,081

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 383 parts In-Stock

1+ parts

$2.010

100+ parts

-

1k+ parts

-

10k+ parts

-

383

$2.010

-

-

-

Native Components

USA . 388 parts In-Stock

1+ parts

$153.357

100+ parts

-

1k+ parts

-

10k+ parts

$147.222

388

$153.357

-

-

$147.222

Northwest PG Solutions

USA . 83 parts In-Stock

1+ parts

$168.692

100+ parts

-

1k+ parts

-

10k+ parts

-

83

$168.692

-

-

-

UNI Independent Distributors

Spain . 7,920 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,920

-

-

-

-

Corphita

USA . 3,496 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,496

-

-

-

-

Overview

Unlock superior tuning and performance with the BB241TRL13 varactor diode from NXP Semiconductors. Renowned for their innovation, NXP delivers unrivaled quality in every component, ensuring reliability in your designs. Ideal for applications in RF circuits and frequency modulation, this diode enhances flexibility while minimizing size. Experience exceptional value with a product designed to elevate your projects, offering unmatched advantages and efficiency in the very high frequency range.

Feature Benefit Bullets

Package Body Material: GLASS

The glass package material provides excellent durability and thermal stability, making it a reliable choice for high-frequency applications.

Config: SINGLE

A single configuration allows for simpler design and integration into circuits, ensuring efficient performance without unnecessary complexity.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, this varactor diode is ideal for RF and microwave circuits, enhancing signal quality and performance.

Surface Mount: YES

Surface mount technology allows for compact circuit designs, improving space efficiency on PCB layouts and enabling high-density packaging.

Package Shape: ROUND

The round package shape can offer better thermal dissipation and an optimized footprint, catering to specific design requirements.

No. of Terminals: 2

With only two terminals, it simplifies circuit connections, reducing potential points of failure and easing assembly processes.

Package Style (Meter): LONG FORM

The long form package style may provide enhanced electrical performance and greater mounting flexibility in various applications.

Terminal Position: END

End terminal positioning optimizes the connection to the PCB, enhancing signal integrity and ease of installation.

Case Connection: ISOLATED

Isolated case connection minimizes interference and improves signal fidelity, making it suitable for sensitive RF applications.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it allows for tunable capacitance, providing flexibility in circuit design, especially for tuning and frequency modulation.

Terminal Form: WRAP AROUND

Wrap-around terminals enhance mechanical strength and reliability of solder joints, ensuring robust connections in demanding environments.

Diode Element Material: SILICON

Silicon as the diode element material ensures a good balance of performance, cost, and availability for various applications.

Minimum Diode Capacitance Ratio: 21

A high minimum capacitance ratio indicates a wide tuning range, which is essential for applications requiring precise frequency adjustments.

Technical Specifications

Varactor Diodes BB241TRL13 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

3% MATCHED SETS ARE AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

21

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

O-LELF-R2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

Terminal Position:

END

Trade Compliance

BB241TRL13 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 8