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MMBV809LT1G

Onsemi

MMBV809LT1G by Onsemi

MMBV809LT1G by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 75 and nominal capacitance of 5.3 pF. It operates in the ultra high frequency band, suitable for applications requiring variable capacitance such as RF tuning circuits.

Median Price

$0.159

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 99,000 parts In-Stock

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-

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$0.159

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$0.132

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$0.117

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$0.159

$0.132

$0.117

DigiKey

USA . 99,000 parts In-Stock

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$0.200

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$0.200

Verical

USA . 93,000 parts In-Stock

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$0.147

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$0.147

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Digiode

USA . 1,363 parts In-Stock

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$0.124

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DigiKey Marketplace

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Vyrian

USA . 8,118 parts In-Stock

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Sogenti Electronics

Canada . 1,963 parts In-Stock

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Corohmni

South Africa . 492 parts In-Stock

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$0.115

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Corphita

USA . 561 parts In-Stock

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561

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AZTECH Wire

Italy . 880 parts In-Stock

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$9.350

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$9.350

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Continental Prestige Electronics

USA . 99,000 parts In-Stock

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$0.115

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Kepictronics

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QUARKTWIN TECHNOLOGY LTD

USA . 13,577 parts In-Stock

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SupplyDigital Components

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TANS Electronics

Latvia . 4,774 parts In-Stock

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Problanco Electronics

Mexico . 3,697 parts In-Stock

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Perfect Parts

USA . 963 parts In-Stock

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963

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UHIMA Technologies

Türkiye . 786 parts In-Stock

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Kulean Microsystems

USA . 128 parts In-Stock

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Overview

Discover the power of innovation with the MMBV809LT1G Varactor Diode by Onsemi. Crafted with precision and quality in mind, this hyperabrupt diode is designed for ultra high frequency applications. Featuring a small outline package and gull wing terminal form, this diode offers unmatched performance and reliability. Whether you're working on radar systems or wireless communication devices, this diode provides a minimum quality factor of 75 and a nominal capacitance of 5.3 pF, giving you the edge you need to stay ahead. Upgrade your projects with the MMBV809LT1G and experience the difference.

Feature Benefit Bullets

Minimum Quality Factor: 75

A high minimum quality factor ensures that this varactor diode provides good performance and efficiency in signal processing applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this varactor diode lightweight and durable, making it suitable for various electronic applications.

Config: SINGLE

The single configuration of this varactor diode simplifies its installation and integration into electronic circuits, making it a convenient choice.

Variable Capacitance Diode Classification: HYPERABRUPT

The hyperabrupt classification of this varactor diode indicates a rapid change in capacitance with voltage, making it ideal for applications requiring precise tuning and frequency control.

Frequency Band: ULTRA HIGH FREQUENCY

Operating in the ultra-high frequency band, this varactor diode is suitable for high-frequency applications such as radar, satellite communication, and wireless networks.

Surface Mount: YES

Being surface mountable, this varactor diode offers easy and efficient PCB assembly, saving time and effort in production processes.

Package Shape: RECTANGULAR

The rectangular package shape of this varactor diode allows for efficient utilization of space on the PCB, making it suitable for compact electronic designs.

No. of Terminals: 3

With three terminals, this varactor diode provides flexibility in connection options, enabling versatile circuit designs and configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style of this varactor diode further enhances its space-saving features, making it suitable for applications with limited board space.

Terminal Finish: TIN

The tin terminal finish on this varactor diode provides good solderability and conductivity, ensuring reliable connections in electronic circuits.

Terminal Position: DUAL

Having a dual terminal position allows for easy and secure mounting of this varactor diode on the PCB, maintaining stability during operation.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation rating, this varactor diode can handle significant power levels without overheating, ensuring long-term reliability in operation.

Nominal Diode Capacitance: 5.3 pF

The nominal capacitance of 5.3 pF in this varactor diode indicates its ability to store and release charge efficiently, essential for frequency tuning and signal modulation.

Minimum Breakdown Voltage: 20 V

Having a minimum breakdown voltage of 20 V, this varactor diode provides protection against voltage spikes and ensures stable operation under varying voltage conditions.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time allowed at peak reflow temperature of 260 °C for 30 seconds ensures proper soldering of this varactor diode onto the PCB, maintaining electrical and mechanical integrity.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260 °C indicates the thermal durability of this varactor diode during the soldering process, ensuring its reliability in high-temperature environments.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers adjustable capacitance levels, making it suitable for frequency modulation, voltage-controlled oscillators, and other signal processing applications.

Terminal Form: GULL WING

The gull wing terminal form of this varactor diode provides strong mechanical support and ease of handling during installation, ensuring secure connections in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 20 V

The maximum repetitive peak reverse voltage of 20 V in this varactor diode indicates its ability to withstand reverse voltage stress and protect against voltage reversals in circuits.

Diode Cap Tolerance: 15.09 %

The diode capacitance tolerance of 15.09% ensures accurate and consistent capacitance values in this varactor diode, maintaining stability and performance in frequency-sensitive applications.

Diode Element Material: SILICON

Made of silicon, a widely used semiconductor material, this varactor diode offers good electrical properties, stability, and durability for long-term performance in electronic circuits.

Minimum Diode Capacitance Ratio: 1.8

With a minimum capacitance ratio of 1.8, this varactor diode provides a wide range of capacitance values for frequency tuning and modulation, offering flexibility in signal processing applications.

Technical Specifications

Varactor Diodes MMBV809LT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Diode Cap Tolerance:

15.09 %

Minimum Diode Capacitance Ratio:

1.8

Nominal Diode Capacitance:

5.3 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

75

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MMBV809LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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