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MMBV2103LT1

Onsemi

MMBV2103LT1 by Onsemi

MMBV2103LT1 by Onsemi is a varactor diode with a min quality factor of 400, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 10 pF and a min breakdown voltage of 30 V, making it ideal for RF tuning circuits in communication systems. The diode's small outline package with gull wing terminals and tin lead finish allows for easy surface mount assembly.

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3

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1k+

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Prism Electronics

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Problanco Electronics

Mexico . 3,382 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

USA . 2,381 parts In-Stock

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Corphita

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TANS Electronics

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UHIMA Technologies

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Corohmni

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Overview

Unlock the potential of your high frequency to ultra high frequency applications with the MMBV2103LT1 Varactor Diode by Onsemi. With a minimum quality factor of 400 and a nominal diode capacitance of 10 pF, this single config diode offers precise control and superior performance. The small outline package makes it perfect for surface mount applications, while the high breakdown voltage ensures reliability. Trust in Onsemi's reputation for quality and innovation to take your designs to the next level with the MMBV2103LT1 Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 400

A high minimum quality factor of 400 indicates that this varactor diode has a high level of efficiency and performance, making it a reliable choice for high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the varactor diode lightweight and durable, suitable for various electronic circuit designs.

Config: SINGLE

The single configuration simplifies the design and installation process, making it easier to integrate this varactor diode into electronic circuits.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

The wide frequency band of high frequency to ultra high frequency allows this varactor diode to be used in a range of applications, from high-speed data transmission to wireless communication.

Surface Mount: YES

Being surface mountable, this varactor diode offers ease of installation and a compact form factor, making it ideal for space-constrained electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape provides efficient use of space and facilitates a secure mounting process, ensuring stability in electronic circuitry.

No. of Terminals: 3

With 3 terminals, this varactor diode offers flexibility in circuit connections and allows for a range of applications and circuit designs.

Terminal Position: DUAL

The dual terminal position enables easy and secure connections, enhancing the reliability and stability of the varactor diode in electronic circuits.

Maximum Power Dissipation: 0.225 W

The high maximum power dissipation of 0.225 W indicates the capability of this varactor diode to handle power effectively without overheating, ensuring long-lasting performance.

Nominal Diode Capacitance: 10 pF

The nominal diode capacitance of 10 pF allows for precise control of capacitance in electronic circuits, making it suitable for applications requiring accurate tuning.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V ensures the protection of the varactor diode and connected components from voltage surges, enhancing the reliability of electronic circuits.

Diode Element Material: SILICON

The use of silicon as the diode element material provides stability and reliability in performance, making this varactor diode a durable and long-lasting component in electronic devices.

Technical Specifications

Varactor Diodes MMBV2103LT1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

10 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MMBV2103LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-374-8493, 5961013748493

NIIN

013748493

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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