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MMBV109L

Onsemi

MMBV109L by Onsemi

MMBV109L by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is designed for very high frequency applications in small outline packages, suitable for surface mount configurations at temperatures up to 125 °C.

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1k+

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Vyrian

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Digiode

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330

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Kulean Microsystems

USA . 3,617 parts In-Stock

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TANS Electronics

Latvia . 3,222 parts In-Stock

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Problanco Electronics

Mexico . 2,162 parts In-Stock

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Corphita

USA . 700 parts In-Stock

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Corohmni

South Africa . 429 parts In-Stock

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SupplyDigital Components

Austria . 264 parts In-Stock

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UHIMA Technologies

Türkiye . 187 parts In-Stock

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Overview

Discover the exceptional performance and reliability of the MMBV109L Varactor Diode by Onsemi. With a minimum quality factor of 200 and very high frequency band, this diode is perfect for applications requiring precise tuning and control. Its small outline package shape and dual terminal position make it easy to integrate into your designs. Experience the benefits of superior quality and durability that Onsemi is known for, while enjoying the value and advantages that this product brings to your projects. Explore the endless possibilities with the MMBV109L Varactor Diode today!

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor allows for better performance in high frequency applications, making this varactor diode suitable for demanding electronic systems.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and resistance to environmental factors, ensuring reliability in various operating conditions.

Config: SINGLE

Single configuration simplifies the design and integration process, making it easier to incorporate this varactor diode into electronic circuits.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, this varactor diode is ideal for use in wireless communication systems and radar systems.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving time and effort during the manufacturing process.

Package Shape: RECTANGULAR

Rectangular package shape allows for compact and space-efficient placement on PCBs, enabling higher component density and better overall circuit design.

No. of Terminals: 3

Having 3 terminals provides flexibility in circuit configurations and connectivity options, allowing for versatile applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, making it suitable for miniaturized electronic devices and applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this varactor diode can withstand elevated temperatures without compromising performance, ensuring reliability in harsh environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and ensures a reliable electrical connection, contributing to the overall durability and longevity of the component.

Terminal Position: DUAL

Dual terminal position allows for easy connectivity and facilitates proper alignment during installation, enhancing user-friendliness and efficiency.

Maximum Power Dissipation: 0.2 W

With a maximum power dissipation of 0.2 W, this varactor diode can handle moderate power levels, suitable for a wide range of electronic applications.

Nominal Diode Capacitance: 29 pF

The nominal capacitance value of 29 pF ensures accurate and consistent capacitance performance, crucial for frequency tuning and signal processing applications.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V offers protection against voltage spikes and ensures the reliability and longevity of the varactor diode in high voltage environments.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this component allows for precise control and adjustment of capacitance, making it ideal for voltage-controlled oscillator circuits and frequency tuning applications.

Terminal Form: GULL WING

Gull wing terminal form facilitates surface mount soldering and provides mechanical stability, enhancing the overall robustness and reliability of the component.

Diode Cap Tolerance: 10.34 %

Having a diode capacitance tolerance of 10.34% ensures accurate and consistent performance in capacitance-sensitive applications, contributing to the overall reliability and quality of the varactor diode.

Diode Element Material: SILICON

Utilizing silicon as the diode element material offers excellent electrical properties, thermal stability, and reliability, making this varactor diode a high-performance and durable component.

Minimum Diode Capacitance Ratio: 5

With a minimum diode capacitance ratio of 5, this varactor diode provides a wide tuning range and flexibility in capacitance adjustment, enabling versatile use in various frequency-dependent circuits.

Technical Specifications

Varactor Diodes MMBV109L attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBV109L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-414-5832, 5961014145832

NIIN

014145832

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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