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BB215TRL

NXP Semiconductors

BB215TRL by NXP Semiconductors

BB215TRL by NXP Semiconductors is a single, surface-mount variable capacitance diode designed for ultra-high frequency applications. It features a min capacitance ratio of 7.6 and an isolated case connection. Ideal for RF tuning and signal processing in compact devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,589 parts In-Stock

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3,589

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Digiode

USA . 2,290 parts In-Stock

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2,290

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Anansix

USA . 248 parts In-Stock

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248

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Distributors (Availability)

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One Stop Electronics

USA . 978 parts In-Stock

1+ parts

$0.010

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978

$0.010

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Native Components

USA . 42 parts In-Stock

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$1.850

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42

$1.850

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Northwest PG Solutions

USA . 1,328 parts In-Stock

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$2.035

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1,328

$2.035

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Corphita

USA . 3,384 parts In-Stock

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3,384

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UNI Independent Distributors

Spain . 740 parts In-Stock

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740

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Overview

Unlock exceptional performance with the BB215TRL varactor diode from NXP Semiconductors. Renowned for quality and reliability, NXP delivers cutting-edge solutions perfect for ultra-high frequency applications, enhancing your design's efficiency and flexibility. Experience superior tuning capabilities, ensuring optimal signal performance in wireless communication, RF circuitry, and more. Elevate your projects with a trusted partner that prioritizes innovation and customer satisfaction!

Feature Benefit Bullets

Package Body Material: GLASS

The glass package material provides excellent insulation and durability, making the diode more reliable in various applications.

Config: SINGLE

A single configuration simplifies design and integration into circuits, offering ease of use for engineers.

Frequency Band: ULTRA HIGH FREQUENCY

This diode is optimized for ultra high frequency applications, ensuring high performance in RF circuits.

Surface Mount: YES

Surface mount technology allows for compact designs and automated assembly, enhancing production efficiency.

Package Shape: ROUND

The round package shape can facilitate better heat dissipation and fit into various circuit layouts.

No. of Terminals: 2

With only two terminals, this varactor diode is easy to integrate into circuits and minimizes complexity.

Package Style (Meter): LONG FORM

The long form package can offer enhanced passive thermal performance in high-power applications.

Terminal Position: END

End terminal positioning allows for better space utilization on printed circuit boards (PCBs).

Case Connection: ISOLATED

Isolated case connections ensure safety and performance integrity in sensitive electronic applications.

Diode Type: VARIABLE CAPACITANCE DIODE

This type of diode enables tuning and frequency modulation, making it ideal for RF applications.

Terminal Form: WRAP AROUND

Wrap around terminals provide enhanced mechanical stability and improve the reliability of solder joints.

Diode Element Material: SILICON

Silicon as a diode element material offers good thermal stability and performance, contributing to overall efficiency.

Minimum Diode Capacitance Ratio: 7.6

A high capacitance ratio enhances the diode's tunability, making it a versatile choice for various tuning applications.

Technical Specifications

Varactor Diodes BB215TRL attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

3% MATCHED SETS ARE AVAILABLE

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

7.6

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

O-LELF-R2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

Terminal Position:

END

Trade Compliance

BB215TRL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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