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BB219

NXP Semiconductors

BB219 by NXP Semiconductors

BB219 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,796 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,500 parts In-Stock

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Anansix

USA . 1,510 parts In-Stock

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Electronic Expediters

USA . 338 parts In-Stock

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Vyrian

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Fibra_Brandt Electronic GMBH

Germany . 17 parts In-Stock

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Mil-Aero Solutions, Inc.

USA . 1 parts In-Stock

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Native Components

USA . 507 parts In-Stock

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$0.930

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One Stop Electronics

USA . 794 parts In-Stock

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$1.010

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Northwest PG Solutions

USA . 1,269 parts In-Stock

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$1.023

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UNI Independent Distributors

Spain . 7,168 parts In-Stock

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Assy Fe

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Corphita

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Overview

Unlock exceptional performance with the BB219 by NXP Semiconductors, a pinnacle of quality in variable capacitance diodes. Renowned for innovation and reliability, NXP delivers unmatched advantages that empower your projects across very high frequency applications. Experience superior tuning capabilities, unparalleled precision, and robust thermal management, ensuring optimal efficiency in your designs. Elevate your technology with the trusted choice of experts—BB219 is your path to excellence!

Feature Benefit Bullets

Package Body Material: GLASS

The glass packaging provides excellent insulation and thermal stability, enhancing reliability in various applications.

Config: SINGLE

A single configuration simplifies circuit design and integration into devices.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high-frequency applications, this diode is suitable for RF communication and other high-frequency technologies.

Surface Mount: YES

Surface mount capabilities enable compact assembly and save space on circuit boards.

Maximum Reverse Current: 0.01 uA

The low reverse current minimizes power loss and enhances energy efficiency in circuits.

Package Shape: ROUND

The round package shape can be advantageous for specific circuit layouts, improving adaptability.

Reverse Test Voltage: 28 V

With a high reverse test voltage, this diode can withstand harsh conditions, increasing durability in demanding applications.

No. of Terminals: 2

A two-terminal configuration simplifies connections, streamlining circuit integration.

Package Style (Meter): LONG FORM

The long form package style can facilitate better handling during assembly and enhances thermal performance.

Maximum Operating Temperature: 100 °C

Operating at high temperatures ensures reliability in a wide range of environments, especially in high-power applications.

Terminal Position: END

End terminal positioning offers flexible mounting options, allowing for versatile design layouts.

Case Connection: ISOLATED

Isolated case connections prevent interference and ensure stable performance in sensitive electronic environments.

Minimum Breakdown Voltage: 30 V

A minimum breakdown voltage of 30 V protects against damage from voltage spikes, making it reliable for high-voltage applications.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it allows for tuning and modulation in RF circuits, enhancing functionality in communication systems.

Terminal Form: WRAP AROUND

The wrap-around terminal form provides secure connections, improving electrical performance and reliability.

Diode Element Material: SILICON

Silicon material offers excellent electrical properties and reliability, ensuring consistent performance over time.

Minimum Diode Capacitance Ratio: 12

A high capacitance ratio allows for significant variation in capacitance, making it versatile for various tuning applications.

Technical Specifications

Varactor Diodes BB219 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Additional Features:

CAPACITANCE MATCHED TO 2.5% FOR ANY TWO DIODES

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

12

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

O-LELF-R2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Qualification:

Not Qualified

Maximum Reverse Current:

.01 uA

Reverse Test Voltage:

28 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

END

Trade Compliance

BB219 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-390-8881, 5961013908881

NIIN

013908881

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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