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MV209RLRM

Onsemi

MV209RLRM by Onsemi

MV209RLRM by Onsemi is a Varactor Diode with 29pF capacitance, 30V breakdown voltage, and 200 min quality factor. Ideal for Very High Frequency applications due to its variable capacitance diode type and max operating temperature of 125 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,606 parts In-Stock

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Vyrian

USA . 1,241 parts In-Stock

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Kulean Microsystems

USA . 6,147 parts In-Stock

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TANS Electronics

Latvia . 5,873 parts In-Stock

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SupplyDigital Components

Austria . 3,364 parts In-Stock

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Corphita

USA . 2,191 parts In-Stock

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Problanco Electronics

Mexico . 870 parts In-Stock

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UHIMA Technologies

Türkiye . 726 parts In-Stock

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Corohmni

South Africa . 370 parts In-Stock

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Overview

Unleash the power of innovation with the MV209RLRM Varactor Diode by Onsemi. Known for their high-quality components, Onsemi delivers reliable solutions for very high frequency applications. This single varactor diode offers a minimum quality factor of 200, ensuring superior performance. With a nominal capacitance of 29 pF and a breakdown voltage of 30V, this diode provides unmatched flexibility and precision. Trust Onsemi to provide you with cutting-edge technology that meets your needs. Experience the value and benefits of the MV209RLRM in your next project.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor ensures efficient performance and stable operation at very high frequencies.

Package Body Material: PLASTIC/EPOXY

Durable plastic/epoxy material provides protection and insulation for the varactor diode, extending its lifespan.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, ensuring reliable performance in demanding RF systems.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into electronic circuits.

No. of Terminals: 2

Two terminals provide a simple connection interface, making installation and use straightforward.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is compact and space-saving, ideal for applications where size is a concern.

Maximum Operating Temperature: 125 °C

High maximum operating temperature allows for reliable operation even in high-temperature environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and connectivity for easy installation.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and soldering, simplifying the assembly process.

Maximum Power Dissipation: 0.2 W

High maximum power dissipation rating ensures the varactor diode can handle power fluctuations without damage.

Nominal Diode Capacitance: 29 pF

Optimal capacitance value for various tuning and filtering applications in RF circuits.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage provides protection against voltage spikes and ensures reliable operation.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for adjustable capacitance, making it suitable for frequency-modulated applications.

Terminal Form: THROUGH-HOLE

Through-hole terminal form makes it easy to mount the varactor diode on a PCB for secure connections.

Diode Cap Tolerance: 10.34 %

Capacitance tolerance of 10.34% provides accuracy and consistency in tuning applications.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability in RF circuits.

Minimum Diode Capacitance Ratio: 5

High minimum capacitance ratio of 5 allows for a wide range of capacitance values, enhancing flexibility in circuit design.

Technical Specifications

Varactor Diodes MV209RLRM attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV209RLRM Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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