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MV209RL

Onsemi

MV209RL by Onsemi

The Onsemi MV209RL is a varactor diode with a min quality factor of 200, nominal capacitance of 29 pF, and breakdown voltage of 30 V. It is designed for very high frequency applications, featuring a single configuration in a cylindrical package suitable for temperatures up to 125 °C.

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1k+

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Digiode

USA . 2,326 parts In-Stock

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Vyrian

USA . 229 parts In-Stock

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Latvia . 8,070 parts In-Stock

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SupplyDigital Components

Austria . 7,294 parts In-Stock

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Problanco Electronics

Mexico . 4,212 parts In-Stock

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Corphita

USA . 1,694 parts In-Stock

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Kulean Microsystems

USA . 1,510 parts In-Stock

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UHIMA Technologies

Türkiye . 501 parts In-Stock

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Corohmni

South Africa . 134 parts In-Stock

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Overview

Unlock the potential of your high-frequency applications with the MV209RL Varactor Diode by Onsemi. With a minimum quality factor of 200, this diode offers top-tier performance and reliability. Manufactured by industry-leader Onsemi, you can trust in the quality and precision of this product. Ideal for very high frequency bands, this diode is perfect for a wide range of applications. Upgrade your projects with the MV209RL and experience the value, benefits, and advantages it brings to your designs.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and stability in high frequency applications, making this varactor diode a reliable choice.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation, stability, and durability, making the varactor diode suitable for various environmental conditions.

Config: SINGLE

Single configuration simplifies the design and integration process, making it easier to use in different applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency operation, this varactor diode is suitable for demanding applications where high frequency performance is required.

Package Shape: ROUND

Round package shape facilitates easy mounting and assembly in circuits, providing convenience and efficiency during installation.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process, making it easier to integrate into circuits and systems.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact and robust form factor, suitable for space-constrained applications requiring high performance.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this varactor diode can function reliably in elevated temperature environments without performance degradation.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and solderability, making the varactor diode easy to solder and integrate into circuits.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and installation, enhancing ease of use and integration into circuit designs.

Maximum Power Dissipation: 0.2 W

With a high maximum power dissipation rating, this varactor diode can handle higher power levels without overheating or damage.

Nominal Diode Capacitance: 29 pF

Nominal capacitance value of 29 pF indicates good tuning range capability, making this varactor diode suitable for frequency tuning applications.

Minimum Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, this varactor diode offers robust protection against voltage spikes and surges, ensuring durability and reliability.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type enables precise tuning and frequency control, making this varactor diode ideal for applications requiring frequency modulation.

Terminal Form: THROUGH-HOLE

Through-hole terminal form simplifies assembly and soldering process, ensuring secure and reliable connections in circuit designs.

Diode Cap Tolerance: 10.34 %

Tight capacitance tolerance of 10.34% ensures consistent and accurate performance in frequency tuning applications, providing reliability and stability.

Diode Element Material: SILICON

Silicon diode element material offers high efficiency and reliability, making this varactor diode a preferred choice for high performance applications.

Minimum Diode Capacitance Ratio: 5

Minimum diode capacitance ratio of 5 indicates good tuning range and flexibility, allowing for precise frequency control and tuning in various applications.

Technical Specifications

Varactor Diodes MV209RL attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV209RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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