Loading...

SVC364K

Onsemi

SVC364K by Onsemi

SVC364K by Onsemi is a Varactor Diode with 2 elements, common cathode config, and 200 min quality factor. It has a min breakdown voltage of 16V and diode capacitance ratio of 17.5. Ideal for applications requiring variable capacitance diodes in surface mount configurations.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,876 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,876

-

-

-

-

Digiode

USA . 1,580 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,580

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Kulean Microsystems

USA . 7,145 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,145

-

-

-

-

SupplyDigital Components

Austria . 6,757 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,757

-

-

-

-

TANS Electronics

Latvia . 5,149 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,149

-

-

-

-

Problanco Electronics

Mexico . 3,542 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,542

-

-

-

-

Corohmni

South Africa . 353 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

353

-

-

-

-

UHIMA Technologies

Türkiye . 275 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

275

-

-

-

-

Corphita

USA . 81 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

81

-

-

-

-

Overview

Unlock endless possibilities with the SVC364K Varactor Diodes by Onsemi. Designed with precision and quality materials, this product offers superior performance in a compact package. With its 2 banks, common cathode configuration, this diode is perfect for applications requiring variable capacitance. Whether it's in telecommunications, radar systems, or frequency synthesizers, the SVC364K delivers unmatched value, benefits, and advantages to customers looking for reliability and efficiency in their projects. Trust Onsemi to provide you with the best solutions for your electronic needs.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high quality factor indicates that this varactor diode has low energy losses and can efficiently store and release energy, making it a reliable component for various applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the varactor diode durable, lightweight, and resistant to environmental factors, ensuring a longer lifespan.

Config: 2 BANKS, COMMON CATHODE, 2 ELEMENTS

This configuration allows for easy integration into circuits and provides flexibility in design, making it suitable for complex electronic systems.

Surface Mount: YES

Being surface mountable, this varactor diode simplifies the assembly process, saves space, and enhances the overall efficiency of the circuit.

Package Shape: RECTANGULAR

The rectangular shape of the package offers easy handling and facilitates placement on circuit boards, making it ideal for automated manufacturing processes.

No. of Terminals: 6

With 6 terminals, this varactor diode provides multiple connection points, enabling versatile circuit configurations and ensuring stable performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, allows for high-density layouts, and enables efficient heat dissipation, enhancing overall performance.

Terminal Position: DUAL

The dual terminal position offers flexibility in mounting and connection options, allowing for customized designs and reliable electrical connections.

Minimum Breakdown Voltage: 16 V

With a minimum breakdown voltage of 16 V, this varactor diode can handle higher voltages safely, providing protection against overvoltage conditions in electronic circuits.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product allows for precise tuning of capacitance values, making it suitable for frequency modulation, signal processing, and voltage-controlled oscillators.

Terminal Form: GULL WING

The gull wing terminal form enables easy soldering and reliable electrical connections, ensuring stable performance in various operating conditions.

No. of Elements: 2

With 2 elements, this varactor diode provides enhanced capacitance range and tuning capabilities, making it versatile for frequency control and tuning applications.

Maximum Repetitive Peak Reverse Voltage: 16 V

The maximum repetitive peak reverse voltage of 16 V allows for reliable operation in reverse bias conditions, ensuring long-term stability and performance of the varactor diode.

Diode Cap Tolerance: 3.22 %

The low diode capacitance tolerance of 3.22% ensures accurate and consistent performance, making this varactor diode suitable for precision electronic applications.

Diode Element Material: SILICON

The use of silicon as the diode element material provides high sensitivity and stability, making this varactor diode suitable for high-frequency applications and precise tuning requirements.

Minimum Diode Capacitance Ratio: 17.5

With a minimum diode capacitance ratio of 17.5, this varactor diode offers a wide range of capacitance values for frequency tuning and modulation, making it versatile for various RF and microwave circuits.

Technical Specifications

Varactor Diodes SVC364K attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

2 BANKS, COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

3.22 %

Minimum Diode Capacitance Ratio:

17.5

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

SVC364K Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20