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SVC344

Onsemi

SVC344 by Onsemi

The Onsemi SVC344 is a varactor diode with 2 elements, common cathode configuration, and 430 pF nominal capacitance. It has a min breakdown voltage of 30 V and is ideal for applications requiring variable capacitance in RF circuits. The diode's plastic/epoxy package with cylindrical shape makes it suitable for bottom terminal position mounting.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,009 parts In-Stock

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Digiode

USA . 744 parts In-Stock

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Problanco Electronics

Mexico . 8,362 parts In-Stock

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TANS Electronics

Latvia . 4,905 parts In-Stock

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Kulean Microsystems

USA . 2,838 parts In-Stock

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Corphita

USA . 1,855 parts In-Stock

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UHIMA Technologies

Türkiye . 829 parts In-Stock

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Corohmni

South Africa . 308 parts In-Stock

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SupplyDigital Components

Austria . 206 parts In-Stock

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Overview

Unlock the full potential of your electronic projects with the high-quality SVC344 Varactor Diodes by Onsemi. With a minimum quality factor of 200 and a nominal capacitance of 430 pF, these diodes offer exceptional performance and reliability for a wide range of applications. Whether you're working on telecommunications, radar systems, or frequency modulation circuits, the SVC344 is the perfect choice for achieving precision and efficiency in your designs. Trust in Onsemi's reputation for excellence and innovation, and experience the value and benefits that our Varactor Diodes bring to your projects.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and efficiency, making this varactor diode a reliable choice for high-frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and lightweight design, making it ideal for compact and portable electronic devices.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easier circuit design and integration, enhancing overall performance.

Package Shape: ROUND

Round package shape ensures uniform distribution of stress and heat dissipation, contributing to the stability and longevity of the varactor diode.

Nominal Diode Capacitance: 430 pF

Optimal capacitance value of 430 pF offers precise tuning capabilities for frequency modulation and signal processing applications.

Minimum Breakdown Voltage: 30 V

Reliable minimum breakdown voltage of 30 V ensures protection against voltage spikes and overloads, enhancing the longevity of the varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for adjustable capacitance levels, enabling flexibility in tuning and modulation for various electronic circuits.

No. of Elements: 2

Having 2 elements provides redundancy and stability in circuit design, ensuring consistent performance even in demanding operating conditions.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum repetitive peak reverse voltage of 30 V, this varactor diode offers protection against reverse current flow and voltage spikes, enhancing reliability.

Minimum Diode Capacitance Ratio: 15

Minimum diode capacitance ratio of 15 allows for a wide range of capacitance adjustments, enabling precise tuning and modulation for diverse electronic applications.

Technical Specifications

Varactor Diodes SVC344 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

2 %

Minimum Diode Capacitance Ratio:

15

Nominal Diode Capacitance:

430 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

SVC344 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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