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SVC364L

Onsemi

SVC364L by Onsemi

SVC364L by Onsemi is a Varactor Diode with 2 elements, common cathode config, and 200 min quality factor. It has a min breakdown voltage of 16V and diode cap tolerance of 3.3%. Ideal for applications requiring variable capacitance diodes in surface mount packages.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,449 parts In-Stock

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Digiode

USA . 401 parts In-Stock

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401

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Kepictronics

USA . 39,000 parts In-Stock

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39,000

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Metaverse IC Inc.

Canada . 33,000 parts In-Stock

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Kulean Microsystems

USA . 4,186 parts In-Stock

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Problanco Electronics

Mexico . 3,614 parts In-Stock

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TANS Electronics

Latvia . 1,773 parts In-Stock

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Corphita

USA . 1,307 parts In-Stock

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SupplyDigital Components

Austria . 226 parts In-Stock

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Corohmni

South Africa . 80 parts In-Stock

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UHIMA Technologies

Türkiye . 63 parts In-Stock

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Overview

Enhance your electronic designs with the SVC364L by Onsemi, a top-quality varactor diode that promises exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode offers a unique combination of value and benefits for your applications. With its high-quality factor and versatile configuration, the SVC364L is ideal for a wide range of uses. Upgrade your projects with this innovative component and experience the advantages it brings to your designs.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better signal-to-noise ratio, which is beneficial for applications requiring high performance and sensitivity.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy is a cost-effective and lightweight material, making the product suitable for various applications without adding unnecessary weight.

Config: 2 BANKS, COMMON CATHODE, 2 ELEMENTS

This configuration enables efficient use of the diodes while providing flexibility in circuit design and optimization.

Surface Mount: YES

Surface mount technology makes it easy to mount the diodes on PCBs, saving space and allowing for automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and alignment on the PCB, ensuring proper connection and stability.

No. of Terminals: 6

Having 6 terminals provides enough connections for various circuit configurations and allows for versatility in design.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is suitable for compact designs where size is a constraint.

Terminal Position: DUAL

Dual terminal position offers redundancy in connections, ensuring reliable performance and ease of troubleshooting.

Minimum Breakdown Voltage: 16 V

Higher breakdown voltage indicates better protection against voltage spikes and surges, enhancing the durability and reliability of the diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for precise tuning of capacitance, making it ideal for frequency modulation and voltage-controlled oscillator circuits.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy soldering and desoldering processes, ensuring quick and efficient assembly and repair.

No. of Elements: 2

Having 2 elements provides dual functionality in a single package, saving space and simplifying circuit layout.

Maximum Repetitive Peak Reverse Voltage: 16 V

With a high maximum repetitive peak reverse voltage, the diode can withstand reverse voltage without breakdown, ensuring long-term reliability.

Diode Cap Tolerance: 3.3 %

Low capacitance tolerance ensures accurate and consistent performance, crucial for precise tuning and frequency stabilization applications.

Diode Element Material: SILICON

Silicon diode element material offers high purity and stability, resulting in low noise and improved performance in high-frequency applications.

Minimum Diode Capacitance Ratio: 17.5

Higher diode capacitance ratio allows for wider tuning range and precise control of capacitance, making it suitable for high-frequency RF applications.

Technical Specifications

Varactor Diodes SVC364L attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

2 BANKS, COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

3.3 %

Minimum Diode Capacitance Ratio:

17.5

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

SVC364L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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