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SVC353R

Onsemi

SVC353R by Onsemi

The Onsemi SVC353R is a Varactor Diode with 3 elements, common cathode config, and min. quality factor of 200. Ideal for applications requiring variable capacitance diodes in surface mount packages with a min. breakdown voltage of 16 V.

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 1,162 parts In-Stock

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Digiode

USA . 605 parts In-Stock

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Problanco Electronics

Mexico . 6,575 parts In-Stock

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Corphita

USA . 2,332 parts In-Stock

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SupplyDigital Components

Austria . 1,783 parts In-Stock

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Kulean Microsystems

USA . 1,328 parts In-Stock

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UHIMA Technologies

Türkiye . 360 parts In-Stock

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TANS Electronics

Latvia . 306 parts In-Stock

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Corohmni

South Africa . 236 parts In-Stock

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Overview

Enhance your electronic designs with the high-quality SVC353R Varactor Diode by Onsemi. With a minimum quality factor of 200, this diode offers superior performance and reliability. Perfect for use in RF tuning applications, this diode features common cathode configuration with 3 elements for versatile usage. Its small outline package makes it ideal for surface mount applications. Experience the benefits of precise tuning and improved signal quality with the SVC353R from Onsemi.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor ensures stable performance and reliability of the varactor diode.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the diode lightweight and durable, suitable for various applications.

Config: COMMON CATHODE, 3 ELEMENTS

Common cathode configuration with 3 elements allows for easier integration and connection in circuit designs.

Surface Mount: YES

Surface mount capability simplifies the assembly process and ensures compatibility with modern PCB design practices.

Package Shape: RECTANGULAR

Rectangular shape provides a compact footprint, making it ideal for space-constrained applications.

No. of Terminals: 6

Having 6 terminals allows for more versatile connectivity options and flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB layout and facilitates high-density mounting.

Terminal Position: DUAL

Dual terminal position offers redundancy and improved contact reliability for optimal performance.

Minimum Breakdown Voltage: 16 V

High minimum breakdown voltage ensures protection against voltage spikes and overloads, enhancing the diode's durability.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for tuning and adjustment of capacitance, making it suitable for frequency-modulated applications.

Terminal Form: GULL WING

Gull wing terminal form provides secure soldering connections and reliable electrical contact for stable performance.

No. of Elements: 3

Having 3 elements offers enhanced capacitance control and flexibility in circuit design for diverse applications.

Maximum Repetitive Peak Reverse Voltage: 16 V

Higher maximum repetitive peak reverse voltage ensures robustness and protection against reverse polarity conditions.

Diode Cap Tolerance: 3.26 %

Tight diode capacitance tolerance ensures consistent performance and accuracy in tuning applications.

Diode Element Material: SILICON

Silicon material for diode elements provides stable and reliable performance in various operating conditions.

Minimum Diode Capacitance Ratio: 17.5

Higher minimum diode capacitance ratio allows for wider tuning range and greater frequency modulation capabilities.

Technical Specifications

Varactor Diodes SVC353R attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMMON CATHODE, 3 ELEMENTS

Diode Cap Tolerance:

3.26 %

Minimum Diode Capacitance Ratio:

17.5

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

No. of Elements:

3

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

SVC353R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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