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1N5148

Onsemi

1N5148 by Onsemi

1N5148 by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 47 pF, and breakdown voltage of 60 V. It is used in RF tuning circuits for applications like frequency modulation due to its variable capacitance property.

Median Price

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Lifecycle Status

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Vyrian

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Digiode

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LWI Electronics Inc

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Elcom Components

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ACDS - Activité Composants Distribution Service

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Problanco Electronics

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TANS Electronics

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Corphita

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Kulean Microsystems

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Northwest PG Solutions

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SupplyDigital Components

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Perfect Parts

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Corohmni

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

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Overview

Enhance your electronic designs with the high-quality 1N5148 Varactor Diode by Onsemi. Known for their superior manufacturing standards, Onsemi provides reliable components that ensure optimal performance in a variety of applications. The 1N5148 boasts a minimum Quality Factor of 200 and a low power dissipation of 0.4W, making it a cost-effective and efficient solution for frequency tuning and voltage-controlled oscillator circuits. Trust Onsemi to deliver top-notch products like the 1N5148 that offer exceptional value and benefits to customers seeking reliable and durable electronic components.

Feature Benefit Bullets

Minimum Quality Factor: 200

Having a high minimum quality factor of 200 means that the varactor diode has excellent frequency stability and low loss, making it a reliable choice for high frequency applications.

Package Body Material: GLASS

The use of glass as the package body material provides good electrical insulation and thermal conductivity, ensuring stable performance and durability.

Config: SINGLE

The single configuration simplifies the circuit design and makes the varactor diode easier to integrate into various electronic applications.

Package Shape: ROUND

The round package shape allows for easy mounting and placement within a circuit, providing versatility in design and installation.

No. of Terminals: 2

With only two terminals, the varactor diode is easy to connect and use in circuits, reducing complexity and potential for error.

Package Style (Meter): LONG FORM

The long form package style offers more flexibility in placement and orientation within a circuit, optimizing space usage and design layout.

Terminal Position: AXIAL

The axial terminal position simplifies installation and alignment of the varactor diode, making it easier to accurately connect and integrate within a circuit.

Case Connection: ISOLATED

An isolated case connection helps prevent interference and ensures reliable performance in high voltage applications, enhancing safety and stability.

Maximum Power Dissipation: 0.4 W

With a maximum power dissipation of 0.4 W, the varactor diode can handle moderate power levels, making it suitable for a range of electronic devices and systems.

Nominal Diode Capacitance: 47 pF

The nominal capacitance value of 47 pF allows for precise tuning and adjustment in RF circuits, enabling optimal performance in frequency modulation and signal processing.

Minimum Breakdown Voltage: 60 V

The high minimum breakdown voltage of 60 V ensures reliable operation and protection against voltage spikes, enhancing the overall durability and longevity of the varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance levels for tuning and modulation in communication and signal processing applications, providing versatility and flexibility in circuit design.

Terminal Form: WIRE

The wire terminal form simplifies connection and soldering processes, making it easy to integrate the varactor diode into various electronic circuits and devices.

Diode Cap Tolerance: 10 %

With a tolerance of 10%, this varactor diode offers consistent and reliable performance, ensuring accurate capacitance values and stable operation in various environmental conditions.

Diode Element Material: SILICON

The use of silicon as the diode element material provides good thermal stability and low leakage currents, ensuring reliable performance and durability in demanding electronic applications.

Minimum Diode Capacitance Ratio: 3.2

The minimum capacitance ratio of 3.2 allows for precise adjustment and tuning in RF circuits, enabling fine control over frequency modulation and signal processing for optimal performance.

Technical Specifications

Varactor Diodes 1N5148 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

60 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

3.2

Nominal Diode Capacitance:

47 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-204AA

JESD-30 Code:

O-LALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

1N5148 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-233-7293, 5961002337293, 5961-00-137-8608, 5961001378608, 5961-14-404-5085, 5961144045085

NIIN

002337293, 001378608, 144045085

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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