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STVD901J

STMicroelectronics

STVD901J by STMicroelectronics

STVD901J by STMicroelectronics is a variable capacitance diode ideal for UHF applications. It features a nominal capacitance of 4 pF, operates at max 150 °C, and has a peak reverse voltage of 6 V. Its compact design makes it suitable for surface mount technology.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Anansix

USA . 2,485 parts In-Stock

1+ parts

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100+ parts

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2,485

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Vyrian

USA . 1,625 parts In-Stock

1+ parts

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1,625

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Digiode

USA . 861 parts In-Stock

1+ parts

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861

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 335 parts In-Stock

1+ parts

$0.107

100+ parts

-

1k+ parts

$0.096

10k+ parts

-

335

$0.107

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$0.096

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MKK Technologies

India . 2,248 parts In-Stock

1+ parts

$0.201

100+ parts

-

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10k+ parts

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2,248

$0.201

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DigiPath Technology Company

USA . 2,248 parts In-Stock

1+ parts

$0.201

100+ parts

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2,248

$0.201

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Corphita

USA . 1,499 parts In-Stock

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1,499

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Parana Technologies

USA . 508 parts In-Stock

1+ parts

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100+ parts

$0.128

1k+ parts

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508

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$0.128

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Overview

Elevate your designs with the STVD901J from STMicroelectronics, a leading innovator in semiconductor technology. This ultra-high frequency varactor diode offers exceptional quality and reliability, making it ideal for RF tuning and voltage-controlled oscillators. With its compact surface mount design and impressive performance, you’ll enjoy enhanced efficiency and flexibility in your applications. Trust STMicroelectronics for unmatched value and innovation in every component!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable material provides excellent insulation and protection, making the diode reliable for various applications.

Config: SINGLE

A single configuration simplifies integration into circuits and reduces complexity in design.

Frequency Band: ULTRA HIGH FREQUENCY

Suitable for applications in the UHF range, making it ideal for communication and RF systems.

Surface Mount: YES

Surface mount compatibility allows for compact designs and automated assembly, improving manufacturing efficiency.

Package Shape: RECTANGULAR

Rectangular package shape optimizes space on PCBs and allows for better thermal management.

No. of Terminals: 2

The simple two-terminal design facilitates easier circuit integration and reduces the footprint.

Package Style (Meter): SMALL OUTLINE

The small outline design ensures compact placement on boards, making it perfect for space-constrained applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature increases reliability and durability in demanding environments.

Terminal Finish: MATTE TIN

Matte tin finish enhances solderability and provides good corrosion resistance, ensuring longevity.

Terminal Position: DUAL

Dual terminal positioning supports better layout flexibility in circuit designs.

Nominal Diode Capacitance: 4 pF

The low nominal capacitance allows for effective tuning and control in RF applications.

Diode Type: VARIABLE CAPACITANCE DIODE

This capability is essential for tuning applications in oscillators and filters, making the diode versatile.

Terminal Form: GULL WING

Gull wing terminals ensure a reliable solder connection and easy mounting on PCBs.

Maximum Repetitive Peak Reverse Voltage: 6 V

This specification ensures the diode can handle specific reverse voltages, enhancing performance in various circuits.

Diode Cap Tolerance: 10 %

A 10% tolerance allows for predictable performance, which is crucial in precision applications.

Diode Element Material: SILICON

Silicon material provides excellent electrical characteristics, enhancing efficiency and performance.

Minimum Diode Capacitance Ratio: 2

A good capacitance ratio ensures effective tuning range, making it suitable for a variety of RF applications.

Technical Specifications

Varactor Diodes STVD901J attributes and parameters. Explore more Varactor Diodes devices from STMicroelectronics

Specs

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2

Nominal Diode Capacitance:

4 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

6 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Trade Compliance

STVD901J Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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