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MV1626

Onsemi

MV1626 by Onsemi

MV1626 by Onsemi is a single varactor diode with 12 pF nominal capacitance, 20 V breakdown voltage, and 0.4 W power dissipation. It is commonly used in RF applications for frequency tuning due to its variable capacitance properties.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,511 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 7,721 parts In-Stock

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Problanco Electronics

Mexico . 7,707 parts In-Stock

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TANS Electronics

Latvia . 4,754 parts In-Stock

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Corphita

USA . 2,422 parts In-Stock

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Kulean Microsystems

USA . 1,894 parts In-Stock

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Corohmni

South Africa . 377 parts In-Stock

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UHIMA Technologies

Türkiye . 219 parts In-Stock

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Overview

Enhance your electronic designs with the MV1626 Varactor Diode from Onsemi. Known for their superior quality and reliability, Onsemi products are trusted by professionals worldwide. The MV1626 offers precise variable capacitance, making it ideal for applications in RF tuning, voltage-controlled oscillators, and frequency modulation. Experience enhanced performance and efficiency with the MV1626, a versatile component that delivers exceptional value and benefits to customers seeking high-quality solutions for their projects.

Feature Benefit Bullets

Package Body Material: Glass

Glass material provides good thermal resistance and ensures stable performance of the varactor diode.

No. of Terminals: 2

Having 2 terminals makes it easy to integrate the varactor diode into circuits and ensures a simple and straightforward connection.

Maximum Power Dissipation: 0.4 W

With a high maximum power dissipation of 0.4 W, this varactor diode can handle relatively high power levels without overheating or performance degradation.

Nominal Diode Capacitance: 12 pF

The nominal capacitance of 12 pF makes this varactor diode suitable for a wide range of applications that require precise capacitance values.

Minimum Breakdown Voltage: 20 V

The minimum breakdown voltage of 20 V ensures reliability and protection against voltage spikes, making this varactor diode durable and long-lasting.

Diode Type: Variable Capacitance Diode

Being a variable capacitance diode, this product allows for adjustable capacitance which is crucial for frequency tuning and voltage-controlled oscillator applications.

Diode Element Material: Silicon

The use of silicon as the diode element material provides good stability and performance consistency over a wide range of operating temperatures.

Technical Specifications

Varactor Diodes MV1626 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

20 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2

Nominal Diode Capacitance:

12 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-204AA

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV1626 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-496-3340, 5961004963340

NIIN

004963340

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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