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MV1630

Onsemi

MV1630 by Onsemi

The Onsemi MV1630 is a single varactor diode with 18pF nominal capacitance, 20V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its variable capacitance property.

Median Price

$4.990

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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TEDSS.com

USA . 67 parts In-Stock

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Electronic Expediters

USA . 2,175 parts In-Stock

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Digiode

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Vyrian

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Corohmni

South Africa . 467 parts In-Stock

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SupplyDigital Components

Austria . 8,151 parts In-Stock

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Kulean Microsystems

USA . 5,698 parts In-Stock

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TANS Electronics

Latvia . 4,673 parts In-Stock

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Problanco Electronics

Mexico . 1,497 parts In-Stock

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UHIMA Technologies

Türkiye . 847 parts In-Stock

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Corphita

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Overview

Discover the MV1630 by Onsemi, a top-quality varactor diode that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, this diode is perfect for a wide range of applications. With its high-quality materials and innovative design, the MV1630 provides customers with exceptional value and benefits. Whether you're looking to improve signal processing or enhance frequency control, this diode is the perfect solution for your needs. Upgrade your projects with the MV1630 and experience the difference today.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides high reliability and stability, making the varactor diode suitable for long-term use.

Nominal Diode Capacitance: 18 pF

The 18 pF capacitance allows for precise tuning in RF circuits, making it ideal for frequency control applications.

Minimum Breakdown Voltage: 20 V

With a minimum breakdown voltage of 20 V, the varactor diode can handle higher voltages, enhancing its reliability and durability.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it offers adjustable capacitance based on the applied voltage, providing flexibility in circuit design and tuning.

Minimum Diode Capacitance Ratio: 2

The minimum capacitance ratio of 2 allows for a wide range of capacitance values, enabling precise frequency control in various applications.

Technical Specifications

Varactor Diodes MV1630 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

20 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2

Nominal Diode Capacitance:

18 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-204AA

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV1630 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-108-7735, 5961011087735

NIIN

011087735

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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