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MV1650

Onsemi

MV1650 by Onsemi

The Onsemi MV1650 is a single varactor diode with glass package, ideal for applications requiring variable capacitance. With a nominal capacitance of 100pF and min breakdown voltage of 20V, it operates b/w -65 °C to 200°C. Its isolated case connection and wire terminal form make it suitable for diverse electronic circuits.

Median Price

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Lifecycle Status

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8

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Digiode

USA . 1,465 parts In-Stock

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Vyrian

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MISTER SPROCKETS

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ECAB

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North Shore Components

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Electronic Expediters

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R&J Components

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Problanco Electronics

Mexico . 7,371 parts In-Stock

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TANS Electronics

Latvia . 6,402 parts In-Stock

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Metaverse IC Inc.

Canada . 5,880 parts In-Stock

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Kulean Microsystems

USA . 4,485 parts In-Stock

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SupplyDigital Components

Austria . 4,116 parts In-Stock

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UHIMA Technologies

Türkiye . 408 parts In-Stock

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Corphita

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South Africa . 50 parts In-Stock

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Overview

Unlock new possibilities with the MV1650 Varactor Diode by Onsemi. Crafted with precision and expertise, this single-config diode offers unparalleled performance and reliability for a wide range of applications. From frequency tuning in RF circuits to voltage-controlled oscillators, this diode delivers exceptional value and benefits to customers seeking high-quality components. Experience the difference with Onsemi's commitment to excellence in every package.

Feature Benefit Bullets

Package Body Material: GLASS

Glass material provides good thermal stability and moisture resistance, ensuring reliable performance in various environments.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this varactor diode can function efficiently even in high-temperature conditions.

Minimum Operating Temperature: -65 °C

The wide range of minimum operating temperature allows this varactor diode to be used in both low and high-temperature applications.

Nominal Diode Capacitance: 100 pF

The nominal capacitance value of 100 pF ensures accurate and precise tuning capabilities in RF and microwave circuits.

Minimum Breakdown Voltage: 20 V

The minimum breakdown voltage of 20 V provides protection against voltage spikes, ensuring the safety and durability of the diode.

Technical Specifications

Varactor Diodes MV1650 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

20 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2

Nominal Diode Capacitance:

100 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-204AA

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV1650 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-152-7975, 5961001527975, 5961-01-048-7223, 5961010487223, 5961-14-357-9372, 5961143579372

NIIN

001527975, 010487223, 143579372

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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