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MV2105ZL1

Onsemi

MV2105ZL1 by Onsemi

MV2105ZL1 by Onsemi is a Varactor Diode with a Min Quality Factor of 400, Nominal Capacitance of 15pF, and Breakdown Voltage of 30V. It is ideal for RF tuning applications due to its Variable Capacitance nature and can operate at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

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Digiode

USA . 105 parts In-Stock

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Problanco Electronics

Mexico . 8,392 parts In-Stock

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Kulean Microsystems

USA . 7,398 parts In-Stock

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SupplyDigital Components

Austria . 5,175 parts In-Stock

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TANS Electronics

Latvia . 1,721 parts In-Stock

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Corphita

USA . 369 parts In-Stock

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Corohmni

South Africa . 306 parts In-Stock

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UHIMA Technologies

Türkiye . 103 parts In-Stock

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Overview

Unlock endless possibilities with the MV2105ZL1 Varactor Diode by Onsemi. Renowned for its superior quality and reliability, Onsemi delivers cutting-edge technology in every product. Ideal for applications requiring variable capacitance, this diode offers unmatched performance with a minimum quality factor of 400. With a nominal capacitance of 15 pF and a minimum breakdown voltage of 30V, the MV2105ZL1 guarantees optimal functionality in a variety of settings. Experience innovation at its best with Onsemi's Varactor Diode – your key to seamless operation and unparalleled efficiency.

Feature Benefit Bullets

Minimum Quality Factor: 400

A high quality factor indicates low losses, making this varactor diode efficient and reliable.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this varactor diode lightweight and durable.

Config: SINGLE

Single configuration allows for easy integration into electronic circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this varactor diode can withstand demanding operational conditions.

Nominal Diode Capacitance: 15 pF

The specified capacitance value ensures accurate and stable performance in capacitance-sensitive applications.

Minimum Breakdown Voltage: 30 V

The high minimum breakdown voltage provides protection against voltage surges and ensures the reliability of the diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it offers flexibility in tuning circuits and adjusting capacitance as needed.

Terminal Form: THROUGH-HOLE

Through-hole terminals facilitate easy and secure soldering onto circuit boards.

Diode Element Material: SILICON

Silicon diode elements are known for their reliability, efficiency, and stability in various electronic applications.

Minimum Diode Capacitance Ratio: 2.5

The minimum capacitance ratio ensures a wide range of capacitance adjustment, making this varactor diode versatile in different circuit designs.

Technical Specifications

Varactor Diodes MV2105ZL1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2105ZL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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