Loading...

MV2101RLRP

Onsemi

MV2101RLRP by Onsemi

MV2101RLRP by Onsemi is a varactor diode with a min quality factor of 450, nominal capacitance of 6.8 pF, and a breakdown voltage of 30 V. It is used in applications requiring variable capacitance diodes for tuning circuits at temperatures up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,626 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,626

-

-

-

-

Vyrian

USA . 796 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

796

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 5,033 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,033

-

-

-

-

Kulean Microsystems

USA . 3,882 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,882

-

-

-

-

Problanco Electronics

Mexico . 3,358 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,358

-

-

-

-

TANS Electronics

Latvia . 2,988 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,988

-

-

-

-

Corphita

USA . 1,578 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,578

-

-

-

-

UHIMA Technologies

Türkiye . 549 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

549

-

-

-

-

Corohmni

South Africa . 386 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

386

-

-

-

-

Overview

Unlock endless possibilities with the MV2101RLRP Varactor Diode by Onsemi. Known for their superior quality and reliability, Onsemi delivers cutting-edge technology in every product. Ideal for applications requiring precise tuning and frequency control, this diode offers unmatched performance and durability. Enhance your designs with the value and benefits that only Onsemi can provide. Experience the difference with the MV2101RLRP Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 450

The high minimum quality factor ensures optimal performance and efficiency in signal tuning applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides durability and resistance to external factors, making the diode suitable for various environmental conditions.

Config: SINGLE

The single configuration simplifies installation and integration into electronic circuits.

Package Shape: ROUND

The round shape allows for easy mounting and placement in electronic devices.

No. of Terminals: 2

Having only 2 terminals simplifies the connection process, reducing chances of error during installation.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is commonly used and ensures compatibility with a wide range of equipment.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature allows for reliable performance even in harsh temperature conditions.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good conductivity and solderability, ensuring secure connections.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy placement and installation in circuits.

Maximum Power Dissipation: 0.28 W

The high maximum power dissipation capability allows the diode to handle high power levels without damage.

Nominal Diode Capacitance: 6.8 pF

The nominal diode capacitance value indicates the range of frequencies over which the diode can operate effectively.

Minimum Breakdown Voltage: 30 V

The high minimum breakdown voltage ensures protection against voltage spikes and surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it allows for precise tuning of capacitance in electronic circuits.

Terminal Form: THROUGH-HOLE

The through-hole terminal form simplifies PCB assembly and provides mechanical stability.

Diode Cap Tolerance: 10 %

The diode capacitance tolerance of 10% ensures consistent performance and accuracy in tuning applications.

Diode Element Material: SILICON

The use of silicon as the diode element material provides good electrical properties and reliability.

Minimum Diode Capacitance Ratio: 2.5

The high minimum diode capacitance ratio allows for a wide range of capacitance values, enhancing versatility.

Technical Specifications

Varactor Diodes MV2101RLRP attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

6.8 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2101RLRP Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20