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MV2108

Onsemi

MV2108 by Onsemi

MV2108 by Onsemi is a varactor diode with a min quality factor of 300, nominal capacitance of 27 pF, and max operating temperature of 150 °C. It is used in RF applications for frequency tuning due to its variable capacitance property.

Median Price

$0.452

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 35,764 parts In-Stock

1+ parts

-

100+ parts

$0.436

1k+ parts

$0.362

10k+ parts

$0.323

35,764

-

$0.436

$0.362

$0.323

DigiKey

USA . 35,764 parts In-Stock

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-

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$0.550

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35,764

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$0.550

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Verical

USA . 25,993 parts In-Stock

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$0.452

10k+ parts

$0.403

25,993

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-

$0.452

$0.403

Distributors (In-Stock)

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Vyrian

USA . 871 parts In-Stock

1+ parts

$0.293

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871

$0.293

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Digiode

USA . 552 parts In-Stock

1+ parts

$0.339

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552

$0.339

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American Microsemiconductor Inc.

USA . 5 parts In-Stock

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$25.420

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5

$25.420

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DigiKey Marketplace

USA . 35,781 parts In-Stock

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35,781

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Corel Iberica Componentes, S.L.

Spain . 128 parts In-Stock

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128

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M&R Communications

USA . 56 parts In-Stock

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56

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Sunrise Surplus Inc.

USA . 54 parts In-Stock

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54

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J & M Industries LLC

USA . 35 parts In-Stock

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35

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ABC Electronics Ltd.

UK . 15 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 370 parts In-Stock

1+ parts

$0.293

100+ parts

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370

$0.293

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Corphita

USA . 2,124 parts In-Stock

1+ parts

$0.321

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2,124

$0.321

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Kepictronics

USA . 41,781 parts In-Stock

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41,781

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Continental Prestige Electronics

USA . 35,781 parts In-Stock

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$0.293

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35,781

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$0.293

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QUARKTWIN TECHNOLOGY LTD

USA . 21,481 parts In-Stock

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TANS Electronics

Latvia . 7,199 parts In-Stock

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Kulean Microsystems

USA . 7,099 parts In-Stock

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7,099

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Infinite Electronics LLP (Excess)

. 3,812 parts In-Stock

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3,812

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Problanco Electronics

Mexico . 3,048 parts In-Stock

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3,048

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SupplyDigital Components

Austria . 1,578 parts In-Stock

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1,578

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UHIMA Technologies

Türkiye . 313 parts In-Stock

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313

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Assy Fe

Spain . 128 parts In-Stock

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128

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Overview

Discover the MV2108 by Onsemi, a top-quality varactor diode designed to exceed your expectations. With a minimum quality factor of 300 and a nominal capacitance of 27 pF, this diode offers exceptional performance in a variety of applications. Onsemi's reputation for excellence ensures that you're getting a reliable product that delivers consistent results. Whether you're working on RF tuning, frequency modulation, or voltage-controlled oscillators, the MV2108 provides the perfect solution. Experience the value and benefits of this diode today and take your projects to the next level with Onsemi's MV2108.

Feature Benefit Bullets

Minimum Quality Factor: 300

High quality factor ensures efficient performance and reliable operation of the varactor diode.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good insulation and protection for the diode, making it durable and long-lasting.

Config: SINGLE

Single configuration simplifies the circuit design and installation process.

Package Shape: ROUND

Round shape allows for easy and secure mounting of the varactor diode in various applications.

No. of Terminals: 2

Having 2 terminals makes it easy to connect the varactor diode into the circuit.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers efficient heat dissipation and compact design for space-constrained applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this varactor diode can withstand demanding environmental conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good conductivity and solderability for secure connections in the circuit.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy installation and connection of the varactor diode in the circuit.

Maximum Power Dissipation: 0.28 W

With a high maximum power dissipation, this varactor diode can handle high power levels without overheating.

Nominal Diode Capacitance: 27 pF

The nominal diode capacitance value of 27 pF ensures precise and stable performance in frequency-tuning applications.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage of 30 V provides protection against voltage spikes and ensures the reliability of the varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type allows for precise tuning of capacitance in RF and microwave circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form offers easy soldering and secure mounting of the varactor diode on the PCB.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage of 30 V ensures reliable operation and protection against reverse voltage conditions.

Diode Cap Tolerance: 10 %

The 10% diode capacitance tolerance ensures consistency and accuracy in tuning applications.

Diode Element Material: SILICON

Silicon diode element material offers good performance and reliability in various temperature and frequency conditions.

Minimum Diode Capacitance Ratio: 2.5

Minimum diode capacitance ratio of 2.5 allows for a wide range of capacitance tuning in RF circuits.

Technical Specifications

Varactor Diodes MV2108 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

27 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

300

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MV2108 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-264-5514, 5961002645514

NIIN

002645514

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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