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MMBV809LT3G

Onsemi

MMBV809LT3G by Onsemi

MMBV809LT3G by Onsemi is a varactor diode with a min quality factor of 75, ideal for ultra high frequency applications. It features a nominal capacitance of 5.3 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. The diode's hyperabrupt variable capacitance classification and gull wing terminal form enhance its performance in high-frequency circuits.

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Italy . 1,065 parts In-Stock

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Component Stockers USA

USA . 582 parts In-Stock

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$99.990

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RC Electronics

USA . 25,200 parts In-Stock

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Authorized Procurement Solutions

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Perfect Parts

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Kulean Microsystems

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Overview

Discover the MMBV809LT3G by Onsemi, a top-quality Varactor Diode that offers unmatched performance in ultra-high frequency applications. With a minimum quality factor of 75, this hyperabrupt diode provides superior capacitance control for precise tuning. Manufactured by Onsemi, known for their innovative technology and reliable products, this diode is designed to meet the demands of modern electronics. Whether you're working on RF amplifiers, voltage-controlled oscillators, or frequency synthesizers, the MMBV809LT3G delivers exceptional value and performance. Upgrade your designs with this cutting-edge diode and experience the difference in quality and reliability.

Feature Benefit Bullets

Minimum Quality Factor: 75

Higher quality factor ensures better performance and reliability in high-frequency applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good durability and protection for the diode.

Config: SINGLE

Single configuration simplifies circuit design and integration.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt classification allows for fast and precise tuning of capacitance.

Frequency Band: ULTRA HIGH FREQUENCY

Designed for ultra high frequency applications, ensuring high performance in such scenarios.

Surface Mount: YES

Surface mount capability makes it easy to integrate into modern PCB designs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement on PCBs.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for compact electronic devices.

Terminal Finish: TIN

Tin terminal finish enhances solderability and conductivity.

Terminal Position: DUAL

Dual terminal position allows for different mounting options.

Maximum Power Dissipation: 0.225 W

Higher power dissipation allows for better handling of power in demanding applications.

Nominal Diode Capacitance: 5.3 pF

Optimal capacitance value for precise tuning in RF circuits.

Minimum Breakdown Voltage: 20 V

High breakdown voltage ensures protection against voltage spikes.

Peak Reflow Temperature °C: 260

Sufficient reflow temperature for reliable soldering during assembly.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode offers flexibility in tuning RF circuits.

Terminal Form: GULL WING

Gull wing terminal form provides stability during soldering and mounting.

Maximum Repetitive Peak Reverse Voltage: 20 V

High maximum reverse voltage rating ensures protection against reverse polarity.

Diode Cap Tolerance: 15.09 %

Tight capacitance tolerance for precise circuit tuning.

Diode Element Material: SILICON

Silicon material offers good performance and reliability in high-frequency applications.

Minumum Diode Capacitance Ratio: 1.8

Higher capacitance ratio allows for wider range of tuning in RF circuits.

Technical Specifications

Varactor Diodes MMBV809LT3G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Diode Cap Tolerance:

15.09 %

Minimum Diode Capacitance Ratio:

1.8

Nominal Diode Capacitance:

5.3 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

75

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MMBV809LT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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