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MMBV2108LT1

Onsemi

MMBV2108LT1 by Onsemi

MMBV2108LT1 by Onsemi is a varactor diode with a min quality factor of 300, nominal capacitance of 27 pF, and max power dissipation of 0.225 W. It is designed for high frequency to ultra high frequency applications due to its abrupt variable capacitance diode classification. The diode has a small outline package style with gull wing terminals and operates at a min breakdown voltage of 30 V.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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NAC Semi

USA . 13,823 parts In-Stock

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Sogenti Electronics

Canada . 2,450 parts In-Stock

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Vyrian

USA . 1,920 parts In-Stock

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Digiode

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Semi Source

USA . 179 parts In-Stock

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179

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Component Stockers USA

USA . 297 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 19,531 parts In-Stock

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Assy Fe

Spain . 5,900 parts In-Stock

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TANS Electronics

Latvia . 4,454 parts In-Stock

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Authorized Procurement Solutions

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Metaverse IC Inc.

Canada . 2,950 parts In-Stock

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Problanco Electronics

Mexico . 2,834 parts In-Stock

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Kepictronics

USA . 1,800 parts In-Stock

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Corphita

USA . 1,213 parts In-Stock

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SupplyDigital Components

Austria . 1,104 parts In-Stock

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UHIMA Technologies

Türkiye . 657 parts In-Stock

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Kulean Microsystems

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Corohmni

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Overview

Experience the unmatched performance of the MMBV2108LT1 by Onsemi, a leading manufacturer in the industry. These varactor diodes offer high-quality construction and reliable operation, making them perfect for high frequency to ultra-high frequency applications. With a minimum quality factor of 300 and a nominal capacitance of 27 pF, this diode provides precise tuning capabilities. Whether you're designing RF filters or frequency-tuning circuits, the MMBV2108LT1 delivers outstanding value and benefits to meet your needs. Upgrade your projects with the superior performance of Onsemi's varactor diodes today!

Feature Benefit Bullets

Minimum Quality Factor: 300

High quality factor indicates better performance and efficiency in signal processing applications.

Package Body Material: PLASTIC/EPOXY

Durable plastic/epoxy material ensures reliable and long-lasting performance.

Config: SINGLE

Single configuration simplifies installation and reduces complexity in circuit design.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures precise and fast tuning capabilities.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band range makes this diode suitable for a variety of high-frequency applications.

Surface Mount: YES

Surface mount capability enables easy integration onto circuit boards for compact designs.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient space utilization on the circuit board.

No. of Terminals: 3

Three terminals provide versatile connectivity options in circuit connections.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and facilitates high-density mounting.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish ensures good solderability and conductivity.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting and connection orientations.

Maximum Power Dissipation: 0.225 W

High power dissipation capacity allows for reliable operation under varying load conditions.

Nominal Diode Capacitance: 27 pF

Optimal capacitance value for effective tuning and signal processing applications.

Minimum Breakdown Voltage: 30 V

High breakdown voltage ensures protection against voltage spikes and overloads.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time at peak temperature improves soldering efficiency and reliability.

Peak Reflow Temperature °C: 235

High peak reflow temperature capability enhances soldering process for robust connections.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode type offers tunability for various signal processing requirements.

Terminal Form: GULL WING

Gull wing terminal form provides secure connection and ease of handling during assembly.

Maximum Repetitive Peak Reverse Voltage: 30 V

High reverse voltage capacity ensures protection against reverse current flow in the circuit.

Diode Cap Tolerance: 10 %

Capacitance tolerance of 10% allows for precise and consistent performance in signal processing.

Diode Element Material: SILICON

Silicon diode element material offers high conductivity and reliability in various operating conditions.

Minimum Diode Capacitance Ratio: 2.5

Minimum capacitance ratio of 2.5 provides a wide range of capacitance adjustment for different tuning requirements.

Technical Specifications

Varactor Diodes MMBV2108LT1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

27 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

300

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MMBV2108LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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