Loading...

MMBV2107LT1

Onsemi

MMBV2107LT1 by Onsemi

MMBV2107LT1 by Onsemi is a varactor diode with a min quality factor of 350, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 22 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this diode offers precise tuning capabilities for RF circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semi Source

USA . 2,593 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,593

-

-

-

-

Vyrian

USA . 2,433 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,433

-

-

-

-

Digiode

USA . 2,035 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,035

-

-

-

-

Bristol Electronics

USA . 1,069 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,069

-

-

-

-

Electronics Depot

USA . 42 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

42

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 6,040 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,040

-

-

-

-

Problanco Electronics

Mexico . 4,249 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,249

-

-

-

-

Corphita

USA . 2,408 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,408

-

-

-

-

TANS Electronics

Latvia . 976 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

976

-

-

-

-

Kulean Microsystems

USA . 633 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

633

-

-

-

-

UHIMA Technologies

Türkiye . 595 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

595

-

-

-

-

Corohmni

South Africa . 185 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

185

-

-

-

-

Overview

Enhance your electronic designs with the MMBV2107LT1 varactor diode from Onsemi. Known for their exceptional quality and reliability, Onsemi products are trusted by professionals worldwide. This single configuration diode is perfect for high frequency to ultra-high frequency applications, offering a minimum quality factor of 350 and a nominal capacitance of 22 pF. Its small outline package and gull wing terminal form make it easy to integrate into your projects. Experience the value and benefits of using the MMBV2107LT1 in your next design - unlock new possibilities and achieve superior performance.

Feature Benefit Bullets

Minimum Quality Factor: 350

Higher quality factor indicates better performance in terms of signal purity and lower signal loss, making this varactor diode a reliable choice for high frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy package body material ensures durability and protection for the diode, making it suitable for various operating environments.

Variable Capacitance Diode Classification: ABRUPT

Abrupt variable capacitance diodes offer sharp changes in capacitance with voltage, allowing for precise tuning in high frequency circuits.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Being designed for high frequency to ultra high frequency bands, this varactor diode is ideal for applications requiring fast switching and high-speed data transmission.

Surface Mount: YES

Surface mount capability facilitates easy and efficient installation on PCBs, saving time and effort during assembly.

Maximum Power Dissipation: 0.225 W

With a maximum power dissipation of 0.225 W, this varactor diode can handle moderate power levels without overheating, ensuring reliable operation.

Nominal Diode Capacitance: 22 pF

The nominal capacitance value of 22 pF makes this diode suitable for applications requiring precise tuning and adjustment of capacitance.

Technical Specifications

Varactor Diodes MMBV2107LT1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

350

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MMBV2107LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20