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MV7404T1

Onsemi

MV7404T1 by Onsemi

MV7404T1 by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200, ideal for very high frequency applications. It features a nominal capacitance of 120 pF, breakdown voltage of 12 V, and max power dissipation of 0.8 W. This surface-mount diode in small outline package is designed for high-frequency circuit tuning.

Median Price

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Lifecycle Status

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5

In-Stock Inventory

1k+

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Prism Electronics

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Digiode

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Bristol Electronics

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Atlantic Semiconductor

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Vyrian

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Kepictronics

USA . 27,860 parts In-Stock

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Perfect Parts

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SupplyDigital Components

Austria . 8,345 parts In-Stock

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Kulean Microsystems

USA . 4,344 parts In-Stock

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Corphita

USA . 2,087 parts In-Stock

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Problanco Electronics

Mexico . 751 parts In-Stock

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TANS Electronics

Latvia . 575 parts In-Stock

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Corohmni

South Africa . 185 parts In-Stock

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UHIMA Technologies

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Overview

Unlock endless possibilities with the MV7404T1 by Onsemi. Crafted with precision and expertise, this varactor diode offers unparalleled quality and reliability. From very high frequency applications to hyperabrupt variable capacitance diode classifications, this product is designed to exceed expectations. With a minimum quality factor of 200 and a maximum power dissipation of 0.8W, the MV7404T1 delivers top-notch performance. Experience seamless integration with its small outline package style and surface mount capability. Discover the value and benefits this diode brings to your projects today!

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor ensures better performance and reliability in high frequency applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging provides good protection and durability for the diode.

Config: SINGLE

Single configuration simplifies circuit design and installation.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt diodes offer precise and fast variable capacitance, making them suitable for sensitive frequency tuning applications.

Frequency Band: VERY HIGH FREQUENCY

Optimized for very high frequency applications, ensuring efficient performance in demanding conditions.

Surface Mount: YES

Surface mount capability allows for easy and compact mounting on PCBs.

Package Shape: RECTANGULAR

Rectangular package shape enables efficient PCB layout and space-saving design.

No. of Terminals: 4

4 terminals provide flexibility in circuit connections and configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and is suitable for compact electronic devices.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and connectivity.

Terminal Position: DUAL

Dual terminal position offers versatility in circuit board layout and connectivity.

Case Connection: CATHODE

Case connection at cathode simplifies circuit design and improves electrical performance.

Maximum Power Dissipation: 0.8 W

With a maximum power dissipation of 0.8 W, the diode can handle high power levels with efficiency.

Nominal Diode Capacitance: 120 pF

Nominal capacitance of 120 pF provides a good range for frequency tuning and filtering applications.

Minimum Breakdown Voltage: 12 V

With a minimum breakdown voltage of 12 V, the diode offers robust protection against overvoltage conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for dynamic tuning of frequency characteristics in circuits.

Terminal Form: GULL WING

Gull wing terminal form facilitates easy and reliable soldering onto PCBs.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% ensures consistent performance in various operating conditions.

Diode Element Material: SILICON

Silicon diode element material offers stability and reliability in electronic circuits.

Minimum Diode Capacitance Ratio: 10

Minimum capacitance ratio of 10 allows for precise frequency tuning and control in circuits.

Technical Specifications

Varactor Diodes MV7404T1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

12 V

Case Connection:

CATHODE

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

10

Nominal Diode Capacitance:

120 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.8 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MV7404T1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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