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1N5473

Onsemi

1N5473 by Onsemi

1N5473 by Onsemi is a varactor diode with max reverse current of 0.00000002 uA. It has nominal capacitance of 56 pF and breakdown voltage of 30 V. Ideal for applications requiring variable capacitance diodes, such as RF tuning circuits in communication devices.

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Holdelec - ElecDif-Pro

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Northwest PG Solutions

USA . 1,156 parts In-Stock

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Problanco Electronics

Mexico . 6,448 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Native Components

USA . 991 parts In-Stock

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South Africa . 310 parts In-Stock

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Overview

Unlock a world of possibilities with the 1N5473 Varactor Diode by Onsemi. Crafted with precision and reliability, this diode offers unmatched quality and performance. Whether in telecommunications, radar systems, or frequency modulators, the 1N5473 provides exceptional value, benefits, and advantages to customers looking for superior technology. Elevate your projects with the trusted manufacturer, Onsemi, and experience the difference with the 1N5473 Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 300

A high quality factor indicates that this varactor diode has low losses and can provide stable performance in various applications.

Package Body Material: GLASS

The glass package body material provides durability and protection to the internal components of the varactor diode.

Config: SINGLE

Single configuration makes it easy to integrate this varactor diode into electronic circuits without additional complexity.

Variable Capacitance Diode Classification: ABRUPT

The abrupt classification ensures precise control over the variable capacitance, making this diode suitable for frequency tuning applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current helps in minimizing power losses and improving the overall efficiency of the circuit where this varactor diode is used.

Package Shape: ROUND

The round package shape allows for easy mounting and placement in electronic circuit layouts.

Reverse Test Voltage: 25 V

The 25V reverse test voltage ensures the reliability and durability of this varactor diode under reverse bias conditions.

No. of Terminals: 2

With 2 terminals, this varactor diode is simple to connect and suitable for basic circuit designs.

Package Style (Meter): LONG FORM

The long form package style provides additional stability and protection to the diode, making it ideal for long-term use.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this varactor diode can withstand elevated temperatures without degradation in performance.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature range allows for versatility in usage, even in colder environments.

Terminal Finish: TIN LEAD

The tin-lead terminal finish provides excellent solderability and ensures secure connections in electronic circuits.

Terminal Position: AXIAL

Axial terminal position simplifies the mounting and connection process of this varactor diode in electronic circuits.

Case Connection: ISOLATED

Isolated case connection helps in preventing any interference or crosstalk, maintaining signal integrity in the circuit.

Maximum Power Dissipation: 0.4 W

A high maximum power dissipation rating indicates that this varactor diode can handle higher power levels without overheating.

Nominal Diode Capacitance: 56 pF

The nominal capacitance value of 56pF makes this varactor diode suitable for various tuning and frequency control applications.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30V ensures the reliability and safety of this varactor diode under high voltage conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers flexibility in tuning and adjusting capacitance as per circuit requirements.

Terminal Form: WIRE

The wire terminal form simplifies the connection process and provides a secure attachment in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum repetitive peak reverse voltage of 30V, this varactor diode can handle voltage spikes and surges effectively.

Diode Cap Tolerance: 20 %

The 20% diode capacitance tolerance ensures consistent performance and accurate tuning capabilities in various circuit applications.

Diode Element Material: SILICON

Silicon diode element material offers reliability, stability, and consistent performance in a wide range of operating conditions.

Minimum Diode Capacitance Ratio: 2.9

The minimum capacitance ratio of 2.9 provides a wide range of capacitance values for flexible tuning and frequency adjustment in circuits.

Technical Specifications

Varactor Diodes 1N5473 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.9

Nominal Diode Capacitance:

56 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

300

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5473 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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