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1N5682

Onsemi

1N5682 by Onsemi

1N5682 by Onsemi is a Varactor Diode with a Min Quality Factor of 600, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 8.2 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Vyrian

USA . 572 parts In-Stock

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Digiode

USA . 156 parts In-Stock

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156

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Native Components

USA . 870 parts In-Stock

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$0.850

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870

$0.850

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Northwest PG Solutions

USA . 1,777 parts In-Stock

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$0.935

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$0.935

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SupplyDigital Components

Austria . 7,455 parts In-Stock

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7,455

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TANS Electronics

Latvia . 7,341 parts In-Stock

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Problanco Electronics

Mexico . 6,255 parts In-Stock

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Kulean Microsystems

USA . 5,045 parts In-Stock

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Corphita

USA . 1,106 parts In-Stock

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UHIMA Technologies

Türkiye . 613 parts In-Stock

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Corohmni

South Africa . 325 parts In-Stock

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Overview

Unlock the power of the 1N5682 Varactor Diode by Onsemi, a premium quality product designed to deliver exceptional performance in a range of applications. Manufactured by Onsemi, a trusted industry leader, this diode boasts a high minimum quality factor of 600 and a variable capacitance diode classification of abrupt. With its reliable design and superior construction using glass material, this diode ensures stability and precision in your circuit. Whether you're working on RF tuning, frequency modulation or voltage-controlled oscillators, the 1N5682 offers unmatched value and benefits. Trust Onsemi for top-notch quality and elevate your projects with the 1N5682 Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 600

A high quality factor indicates better frequency stability and lower losses, making this varactor diode a reliable choice for high-frequency applications.

Package Body Material: GLASS

Glass package offers excellent thermal and electrical insulation, ensuring the reliability and durability of the varactor diode.

Config: SINGLE

Single configuration simplifies the circuit design and integration, making it easier to use in various electronic applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and improved efficiency in the circuit, making this varactor diode suitable for low-power applications.

Package Shape: ROUND

Round package shape provides easier handling and mounting options, enhancing the overall convenience of using this varactor diode.

Reverse Test Voltage: 40 V

High reverse test voltage capability makes this varactor diode suitable for applications where high voltage operation is required.

No. of Terminals: 2

Having two terminals simplifies the connection and installation process, making this varactor diode user-friendly.

Maximum Operating Temperature: 175 °C

High maximum operating temperature tolerance allows this varactor diode to operate reliably in elevated temperature environments.

Minimum Operating Temperature: -65 °C

Wide operating temperature range enables this varactor diode to function effectively in both low and high-temperature conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides excellent solderability and reliability, ensuring secure connections in various electronic circuits.

Maximum Power Dissipation: 0.4 W

High power dissipation capability allows this varactor diode to handle moderate power levels, making it suitable for a range of applications.

Nominal Diode Capacitance: 8.2 pF

The nominal capacitance value of 8.2 pF provides a good balance between capacitance and frequency response, making this varactor diode versatile in different circuit designs.

Minimum Breakdown Voltage: 45 V

The high minimum breakdown voltage ensures reliable operation and protection against voltage spikes, making this varactor diode durable and long-lasting.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers tunability in capacitance, allowing for precise control in frequency-dependent circuits.

Minimum Diode Capacitance Ratio: 3.1

The minimum capacitance ratio of 3.1 indicates a wide dynamic range of capacitance values, making this varactor diode flexible for different tuning requirements.

Technical Specifications

Varactor Diodes 1N5682 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

45 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.1

Nominal Diode Capacitance:

8.2 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

600

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

40 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5682 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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