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1N5699

Onsemi

1N5699 by Onsemi

1N5699 by Onsemi is a Varactor Diode with 12pF capacitance, 65V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

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Overview

Unlock the potential of your electronic designs with the 1N5699 Varactor Diode from Onsemi. Crafted with precision and quality in mind, this diode offers a minimum quality factor of 400 and a nominal capacitance of 12pF. Ideal for applications requiring variable capacitance, this diode provides smooth operation and reliable performance. With a maximum reverse current of 0.00000002uA and a maximum power dissipation of 0.4W, you can trust in the durability and efficiency of this product. Elevate your projects with the 1N5699 Varactor Diode and experience the difference that Onsemi's superior technology can bring to your work.

Feature Benefit Bullets

Minimum Quality Factor: 400

High quality factor ensures better performance and stability of the varactor diode in various applications.

Package Body Material: GLASS

Glass material provides durability and protection to the diode, making it suitable for long-term use.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification indicates precise and controlled capacitance variation, ideal for frequency tuning applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and efficient operation of the diode.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the diode to withstand elevated temperature environments without performance degradation.

Minimum Operating Temperature: -65 °C

Wide operating temperature range allows the diode to function in both extreme cold and hot conditions.

Nominal Diode Capacitance: 12 pF

Optimal capacitance value for frequency tuning and voltage-controlled oscillator applications.

Minimum Breakdown Voltage: 65 V

High breakdown voltage rating ensures protection against voltage surges and overloads.

Maximum Power Dissipation: 0.4 W

Low power dissipation helps in reducing energy consumption and heat generation.

Diode Element Material: SILICON

Silicon material provides reliability and performance consistency in various operating conditions.

Technical Specifications

Varactor Diodes 1N5699 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.8

Nominal Diode Capacitance:

12 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5699 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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