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1N5684

Onsemi

1N5684 by Onsemi

1N5684 by Onsemi is a varactor diode with 12pF nominal capacitance, abrupt variable capacitance classification, and 550 min quality factor. It operates b/w -65 to 175 °C and is ideal for RF tuning applications due to its low reverse current of 0.00000002 uA.

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Northwest PG Solutions

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TANS Electronics

Latvia . 5,915 parts In-Stock

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Kulean Microsystems

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SupplyDigital Components

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Problanco Electronics

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UHIMA Technologies

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Overview

Unlock the power of precision with the 1N5684 Varactor Diode by Onsemi. Known for its exceptional quality and performance, this diode offers a myriad of applications in telecommunications, radar systems, and frequency tuning. With a minimum Quality Factor of 550 and a nominal capacitance of 12 pF, this diode ensures reliable and efficient operation. Trust Onsemi to deliver cutting-edge technology and superior products that provide unmatched value and benefits to customers. Elevate your projects with the 1N5684 Varactor Diode today.

Feature Benefit Bullets

Minimum Quality Factor: 550

Higher quality factor means better performance and stability in the circuit.

Package Body Material: GLASS

Glass package ensures durability and reliability for long-term use.

Config: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer sharp and precise changes in capacitance, ideal for frequency tuning applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current indicates high efficiency and minimal loss in the circuit.

Package Shape: ROUND

Round shape provides better distribution of stress and ensures uniform performance.

No. of Terminals: 2

Two terminals simplify the connection and integration of the varactor diode into the circuit.

Maximum Operating Temperature: 175 °C

High operating temperature range allows for use in a variety of environments and applications.

Minimum Operating Temperature: -65 °C

Low operating temperature ensures reliable performance even in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and connection reliability.

Maximum Power Dissipation: 0.4 W

High power dissipation capability allows for handling of higher power levels without damage.

Nominal Diode Capacitance: 12 pF

Nominal capacitance value ensures accurate and consistent performance in frequency tuning applications.

Minimum Breakdown Voltage: 45 V

High breakdown voltage protects the diode from voltage spikes and surges in the circuit.

Diode Type: VARIABLE CAPACITANCE DIODE

Varactor diode specifically designed for capacitance modulation and frequency tuning applications.

Maximum Repetitive Peak Reverse Voltage: 40 V

Repetitive peak reverse voltage rating ensures protection against reverse voltage conditions.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows for flexibility in tuning and adjustment of capacitance.

Diode Element Material: SILICON

Silicon material provides stability and reliability in various circuit conditions.

Minimum Diode Capacitance Ratio: 3.2

High minimum capacitance ratio allows for precise and efficient frequency tuning capabilities.

Technical Specifications

Varactor Diodes 1N5684 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

45 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.2

Nominal Diode Capacitance:

12 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

550

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

40 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5684 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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