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BB804-3

NXP Semiconductors

BB804-3 by NXP Semiconductors

BB804-3 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.02 µA, operates up to 100 °C, and comes in a compact rectangular package with dual terminals. Ideal for tuning circuits and RF applications, it ensures efficient performance in small form factors.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

ComSIT Distribution GmbH

Germany . 5,985 parts In-Stock

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ComSIT USA

USA . 5,985 parts In-Stock

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Anansix

USA . 1,702 parts In-Stock

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Digiode

USA . 979 parts In-Stock

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979

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Vyrian

USA . 45 parts In-Stock

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45

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One Stop Electronics

USA . 1,202 parts In-Stock

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$0.010

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$0.010

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Native Components

USA . 644 parts In-Stock

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$361.217

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$353.992

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$350.380

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$346.768

644

$361.217

$353.992

$350.380

$346.768

Northwest PG Solutions

USA . 2,161 parts In-Stock

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$397.338

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UNI Independent Distributors

Spain . 5,336 parts In-Stock

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Corphita

USA . 2,409 parts In-Stock

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Overview

Unlock the potential of your designs with the BB804-3 Varactor Diode from NXP Semiconductors, a leader in innovative electronic solutions. Known for exceptional quality and reliability, this dual-element diode excels in very high-frequency applications, offering unmatched performance in tuning and frequency modulation. Enhance your projects with its compact design, low reverse current, and impressive temperature resilience, ensuring optimal functionality and longevity. Experience the difference with NXP – where cutting-edge technology meets customer-centric value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making it suitable for a variety of applications.

Config: COMMON CATHODE, 2 ELEMENTS

This configuration provides enhanced performance and versatility for circuit designs, enabling efficient signal modulation.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, it is ideal for RF and microwave circuits, enhancing signal performance.

Surface Mount: YES

Surface mount technology allows for compact designs and is compatible with automated assembly processes, improving manufacturing efficiency.

Maximum Reverse Current: 0.02 uA

A very low reverse current ensures minimal leakage and energy loss, leading to more efficient circuit operation.

Package Shape: RECTANGULAR

The rectangular shape facilitates easy integration into PCB layouts, optimizing space and enhancing design flexibility.

Reverse Test Voltage: 16 V

A robust reverse test voltage provides reliability in high-stress conditions, making it suitable for demanding applications.

No. of Terminals: 3

Three terminals enable versatile connections and configurations, improving compatibility with various circuit designs.

Package Style (Meter): SMALL OUTLINE

The small outline package style is designed for space-constrained environments, allowing for compact circuit designs.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature, this diode can function effectively in diverse thermal environments.

Terminal Position: DUAL

Dual terminal positioning supports various mounting configurations, enhancing installation options for designers.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it provides the ability to tune circuits dynamically, making it excellent for RF applications.

Terminal Form: GULL WING

The gull wing terminal form ensures stable solder joints and easy mounting, reducing stress on the diode during assembly.

No. of Elements: 2

The presence of two elements enhances its functionality in tuning applications, providing greater design flexibility.

Diode Element Material: SILICON

The use of silicon as the diode element material ensures excellent electrical performance and reliability in various applications.

Minimum Diode Capacitance Ratio: 1.65

A minimum capacitance ratio of 1.65 allows for effective tuning over a range of frequencies, improving the overall performance of RF circuits.

Technical Specifications

Varactor Diodes BB804-3 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Minimum Diode Capacitance Ratio:

1.65

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

100 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Reverse Current:

.02 uA

Reverse Test Voltage:

16 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

BB804-3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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