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BB804-2

NXP Semiconductors

BB804-2 by NXP Semiconductors

BB804-2 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse voltage of 16V, operates at up to 100 °C, and has a min capacitance ratio of 1.65. Ideal for RF tuning circuits, it comes in a compact surface mount package.

Median Price

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Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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ComSIT Distribution GmbH

Germany . 4,295 parts In-Stock

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ComSIT USA

USA . 4,295 parts In-Stock

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Digiode

USA . 2,546 parts In-Stock

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Anansix

USA . 606 parts In-Stock

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Vyrian

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Fibra_Brandt Electronic GMBH

Germany . 40 parts In-Stock

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One Stop Electronics

USA . 478 parts In-Stock

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$2.010

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Native Components

USA . 770 parts In-Stock

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$847.210

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$830.266

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$821.794

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$813.322

770

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Northwest PG Solutions

USA . 676 parts In-Stock

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UNI Independent Distributors

Spain . 8,365 parts In-Stock

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Corphita

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Overview

Unlock the potential of your designs with the BB804-2 varactor diode from NXP Semiconductors. Renowned for their commitment to quality and innovation, NXP delivers a versatile solution that enhances tuning capabilities in very high-frequency applications. Compact and efficient, this dual-element diode offers superior performance while ensuring reliable operation even under challenging conditions. Elevate your projects with a component designed for excellence and experience the NXP advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material ensures reliability and ease of integration.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration allows for simpler circuit designs and reduces the number of components needed.

Frequency Band: VERY HIGH FREQUENCY

Designed to operate effectively at very high frequencies, making it suitable for RF applications.

Surface Mount: YES

Surface mount technology allows for compact PCB designs and automated assembly.

Maximum Reverse Current: 0.02 uA

Low reverse current minimizes power loss and improves efficiency in circuit designs.

Package Shape: RECTANGULAR

Rectangular shape provides efficient space utilization on PCBs.

Reverse Test Voltage: 16 V

Adequate reverse voltage rating enhances reliability in various applications.

No. of Terminals: 3

Three terminals facilitate versatile connection options for various circuit configurations.

Package Style (Meter): SMALL OUTLINE

Small outline package style contributes to reduced size and weight in electronic devices.

Maximum Operating Temperature: 100 °C

High operating temperature rating ensures reliability in demanding environments.

Terminal Position: DUAL

Dual terminal positioning supports flexibility in circuit layout and design.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance feature makes this diode ideal for tuning and frequency modulation applications.

Terminal Form: GULL WING

Gull wing terminals provide stable soldering points for reliable connections.

No. of Elements: 2

Having two elements allows for increased capacitance variation in a more compact design.

Diode Element Material: SILICON

Silicon material offers excellent electrical properties and stability for this type of diode.

Minimum Diode Capacitance Ratio: 1.65

A minimum capacitance ratio of 1.65 ensures effective tuning and performance for RF signals.

Technical Specifications

Varactor Diodes BB804-2 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Config:

COMMON CATHODE, 2 ELEMENTS

Minimum Diode Capacitance Ratio:

1.65

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JESD-30 Code:

R-PDSO-G3

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

100 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Maximum Reverse Current:

.02 uA

Reverse Test Voltage:

16 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

BB804-2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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