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1N5693

Onsemi

1N5693 by Onsemi

1N5693 by Onsemi is a varactor diode with 68pF nominal capacitance, abrupt variable capacitance classification, and 40V reverse test voltage. It is used in RF applications for tuning circuits due to its high quality factor and low reverse current of 0.00000002uA. Operating temperature ranges from -65 °C to 175°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,690 parts In-Stock

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Digiode

USA . 1,176 parts In-Stock

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SupplyDigital Components

Austria . 7,656 parts In-Stock

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Problanco Electronics

Mexico . 7,021 parts In-Stock

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Northwest PG Solutions

USA . 1,485 parts In-Stock

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Corphita

USA . 1,441 parts In-Stock

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Native Components

USA . 899 parts In-Stock

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Kulean Microsystems

USA . 654 parts In-Stock

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UHIMA Technologies

Türkiye . 602 parts In-Stock

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TANS Electronics

Latvia . 600 parts In-Stock

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Corohmni

South Africa . 211 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the high-quality 1N5693 Varactor Diode by Onsemi. With a minimum quality factor of 250 and a maximum reverse current of 0.00000002 uA, this diode offers superior performance and reliability. Ideal for applications requiring variable capacitance, this diode features an abrupt classification and a nominal capacitance of 68 pF. With a wide operating temperature range from -65 to 175 °C, this diode is built to withstand harsh conditions. Trust Onsemi's reputation for excellence and invest in the 1N5693 for unmatched value and benefits in your projects.

Feature Benefit Bullets

Minimum Quality Factor: 250

A high quality factor indicates the efficiency and effectiveness of the varactor diode, making it a reliable choice for various applications.

Package Body Material: GLASS

Glass packaging provides better protection and insulation for the varactor diode, ensuring durability and reliability in operation.

Config: SINGLE

Single configuration simplifies the design and implementation of the varactor diode in circuits, making it easy to integrate.

Variable Capacitance Diode Classification: ABRUPT

An abrupt variable capacitance diode classification allows for precise and rapid changes in capacitance, offering flexibility in tuning applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and improved efficiency in circuits using the varactor diode.

Package Shape: ROUND

The round package shape facilitates easy integration and mounting of the varactor diode in various electronic systems.

Reverse Test Voltage: 40 V

With a high reverse test voltage, the varactor diode can withstand reverse voltage without breakdown, ensuring reliability in operation.

No. of Terminals: 2

Having two terminals simplifies the connection and usage of the varactor diode in circuit designs.

Package Style (Meter): LONG FORM

The long form packaging provides additional space for circuit connections and ensures easy handling during installation.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the varactor diode to withstand elevated temperatures, making it suitable for a wide range of environments.

Technical Specifications

Varactor Diodes 1N5693 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

45 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.3

Nominal Diode Capacitance:

68 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

250

Maximum Repetitive Peak Reverse Voltage:

40 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

40 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5693 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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