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SVC704

Onsemi

SVC704 by Onsemi

Onsemi's SVC704 is a single varactor diode with abrupt capacitance classification. It operates in the ultra-high frequency band, with a max reverse current of 0.05 uA. Ideal for applications requiring variable capacitance diodes in surface-mount configurations at temperatures up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,671 parts In-Stock

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Digiode

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TANS Electronics

Latvia . 8,176 parts In-Stock

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SupplyDigital Components

Austria . 8,101 parts In-Stock

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Kulean Microsystems

USA . 2,791 parts In-Stock

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Corphita

USA . 2,093 parts In-Stock

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Problanco Electronics

Mexico . 1,717 parts In-Stock

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UHIMA Technologies

Türkiye . 820 parts In-Stock

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Corohmni

South Africa . 251 parts In-Stock

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Overview

Experience the cutting-edge technology of the SVC704 Varactor Diode by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability with this ultra-high frequency diode. Ideal for applications requiring precise tuning and control, the SVC704 offers customers unparalleled value and performance. Whether you're in the telecommunications, aerospace, or automotive industry, this diode provides the flexibility and efficiency needed to take your projects to the next level. Trust Onsemi to bring innovation and excellence to your designs with the SVC704 Varactor Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides good protection for the diode, ensuring long-term reliability.

Variable Capacitance Diode Classification: ABRUPT

This classification indicates that the diode has a sharp change in capacitance with voltage, making it ideal for precise tuning applications.

Frequency Band: ULTRA HIGH FREQUENCY

The diode is designed to operate at ultra high frequencies, providing excellent performance in high-frequency applications.

Surface Mount: YES

Being surface mount allows for easy and convenient assembly onto circuit boards, saving time and effort during production.

Maximum Reverse Current: 0.05 uA

The low reverse current helps minimize power losses, improving overall efficiency of the circuit.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, the diode can withstand a wide range of environments and conditions.

Diode Element Material: SILICON

Silicon is a reliable material for diodes, offering good performance characteristics and long-term stability.

Technical Specifications

Varactor Diodes SVC704 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

SINGLE

Diode Cap Tolerance:

7.14 %

Minimum Diode Capacitance Ratio:

6

Nominal Diode Capacitance:

28 pF

Diode Element Material:

SILICON

Frequency Band:

ULTRA HIGH FREQUENCY

JESD-30 Code:

R-PDSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

.05 uA

Reverse Test Voltage:

10 V

Surface Mount:

YES

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

SVC704 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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