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SVC707

Onsemi

SVC707 by Onsemi

The Onsemi SVC707 is a single varactor diode with 19.92 pF capacitance and 15 V breakdown voltage. It is used in applications requiring variable capacitance, such as tuning circuits in RF communication systems. The diode's silicon element and through-hole terminal form make it suitable for high temperature environments up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

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Digiode

USA . 1,064 parts In-Stock

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TANS Electronics

Latvia . 7,339 parts In-Stock

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Kulean Microsystems

USA . 5,380 parts In-Stock

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Problanco Electronics

Mexico . 4,274 parts In-Stock

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SupplyDigital Components

Austria . 2,313 parts In-Stock

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Corphita

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Corohmni

South Africa . 216 parts In-Stock

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UHIMA Technologies

Türkiye . 191 parts In-Stock

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Overview

Discover the SVC707 by Onsemi, a top-quality varactor diode that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this diode is perfect for a wide range of applications. With its high diode capacitance, low breakdown voltage, and variable capacitance design, the SVC707 provides superior value and benefits to customers. Whether you're looking to improve signal tuning in communication devices or enhance frequency modulation in electronic circuits, the SVC707 is the ideal choice for your next project. Trust Onsemi's expertise and choose the SVC707 for all your varactor diode needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the varactor diode lightweight and durable, ensuring long-term reliability.

Nominal Diode Capacitance: 19.92 pF

The low nominal diode capacitance of 19.92 pF allows for precise tuning and adjustment in electronic circuits, making this varactor diode ideal for frequency-tuning applications.

Minimum Breakdown Voltage: 15 V

The minimum breakdown voltage of 15 V ensures that the varactor diode can handle higher voltages without failing, providing overvoltage protection in electronic circuits.

Diode Cap Tolerance: 6.73 %

The diode capacitance tolerance of 6.73% ensures consistent performance and accuracy in tuning applications, allowing for reliable frequency modulation.

Technical Specifications

Varactor Diodes SVC707 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

15 V

Config:

SINGLE

Diode Cap Tolerance:

6.73 %

Nominal Diode Capacitance:

19.92 pF

Diode Element Material:

SILICON

JESD-30 Code:

R-PSIP-T2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

15 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

SVC707 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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