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MMBV2109L

Onsemi

MMBV2109L by Onsemi

MMBV2109L by Onsemi is a Varactor Diode with a Min Quality Factor of 200, Nominal Capacitance of 33 pF, and Breakdown Voltage of 30 V. It is used in RF applications for frequency tuning due to its Variable Capacitance property.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,939 parts In-Stock

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Digiode

USA . 332 parts In-Stock

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332

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Problanco Electronics

Mexico . 3,755 parts In-Stock

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3,755

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Kulean Microsystems

USA . 2,652 parts In-Stock

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Corphita

USA . 1,801 parts In-Stock

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TANS Electronics

Latvia . 1,569 parts In-Stock

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SupplyDigital Components

Austria . 1,384 parts In-Stock

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UHIMA Technologies

Türkiye . 751 parts In-Stock

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Corohmni

South Africa . 339 parts In-Stock

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Overview

Enhance your electronic designs with the MMBV2109L Varactor Diode by Onsemi. With a minimum quality factor of 200, this diode offers superior performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this diode is perfect for applications requiring variable capacitance such as voltage-controlled oscillators and frequency synthesizers. Its small outline package and dual terminal position make it easy to integrate into your designs. Trust Onsemi's expertise and choose the MMBV2109L for unmatched quality and value in your electronic projects.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor indicates the efficiency of the varactor diode in terms of storing and releasing energy, making this product suitable for high-performance applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures lightweight and durable packaging, making the varactor diode easy to handle and resistant to environmental factors.

Surface Mount: YES

The surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying the manufacturing process.

Nominal Diode Capacitance: 33 pF

The specified capacitance value of 33 pF ensures precise control over the capacitance levels, making this varactor diode suitable for applications requiring specific tuning requirements.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V indicates the diode's ability to withstand higher voltages, providing reliability and safety in various operating conditions.

Technical Specifications

Varactor Diodes MMBV2109L attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBV2109L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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