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MMBV609LT1

Onsemi

MMBV609LT1 by Onsemi

MMBV609LT1 by Onsemi is a varactor diode with common cathode, 2 elements configuration. It has a min quality factor of 250 and nominal capacitance of 29 pF, suitable for very high frequency applications. This hyperabrupt diode operates at a max power dissipation of 0.225 W and has a breakdown voltage of 20 V, making it ideal for small outline surface mount designs.

Median Price

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Lifecycle Status

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ACDS - Activité Composants Distribution Service

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Semi Source

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QUARKTWIN TECHNOLOGY LTD

USA . 20,400 parts In-Stock

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Kulean Microsystems

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Problanco Electronics

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SupplyDigital Components

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Overview

Elevate your electronic designs with the MMBV609LT1 Varactor Diode by Onsemi. Crafted with precision and expertise, this common cathode diode offers a minimum quality factor of 250, making it ideal for very high-frequency applications. With a hyperabrupt variable capacitance diode classification, this small outline package houses two elements with a nominal capacitance of 29pF. Experience the benefits of superior quality and performance that Onsemi is known for, as you unlock new possibilities in your designs with the MMBV609LT1.

Feature Benefit Bullets

Minimum Quality Factor: 250

Higher quality factor indicates better performance and efficiency, making this varactor diode a reliable choice for high-frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the diode lightweight and durable, suitable for various electronic projects.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for easy integration into circuits and provides flexibility in circuit design.

Variable Capacitance Diode Classification: HYPERABRUPT

Being hyperabrupt, this varactor diode offers fast response times and precise tuning capabilities, ideal for high-frequency applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequencies, this diode is suitable for applications where fast and accurate signal processing is required.

Surface Mount: YES

Surface mount capability enables easy and convenient installation on PCBs, saving space and simplifying manufacturing processes.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and mounting on circuit boards, maximizing space utilization and ease of soldering.

No. of Terminals: 3

Having 3 terminals provides multiple connection points, offering flexibility in circuit design and ensuring secure connections.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves valuable board space, making it suitable for compact electronic devices and applications.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish ensures good solderability and reliable electrical connections, enhancing the overall performance and durability of the diode.

Terminal Position: DUAL

Dual terminal position allows for easy installation and connection in various circuit configurations, enhancing versatility and usability.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation rating, this varactor diode can handle transient power spikes effectively, ensuring reliable operation in demanding conditions.

Nominal Diode Capacitance: 29 pF

The nominal capacitance value of 29 pF provides precise tuning capabilities and stable performance in frequency modulation circuits.

Minimum Breakdown Voltage: 20 V

A minimum breakdown voltage of 20 V ensures the diode's durability and protection against voltage surges, making it suitable for high-voltage applications.

Maximum Time At Peak Reflow Temperature (s): 30

The maximum time at peak reflow temperature allows for efficient and safe soldering processes, ensuring reliable connections and performance.

Peak Reflow Temperature °C: 235

The high peak reflow temperature of 235 °C enables robust soldering of the diode onto PCBs, ensuring long-term reliability in various operating conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance values, allowing for precise tuning and control in frequency modulation applications.

Terminal Form: GULL WING

Gull wing terminal form provides easy and secure mounting on PCBs, enhancing mechanical stability and ensuring consistent electrical connections.

No. of Elements: 2

Having 2 elements enhances the functionality and performance of the diode, making it suitable for complex circuit designs and tuning applications.

Maximum Repetitive Peak Reverse Voltage: 20 V

The maximum repetitive peak reverse voltage rating of 20 V ensures protection against voltage spikes and reverse polarity, enhancing the diode's reliability in various applications.

Diode Cap Tolerance: 10.34 %

A tight diode capacitance tolerance of 10.34% ensures consistent performance and accurate tuning capabilities in frequency modulation circuits.

Diode Element Material: SILICON

Silicon is a reliable and widely used material for diode elements, providing stable electrical characteristics and long-term reliability in various operating conditions.

Minimum Diode Capacitance Ratio: 1.8

The minimum diode capacitance ratio of 1.8 indicates a wide tuning range and precise control over capacitance values, making this diode suitable for versatile tuning applications.

Technical Specifications

Varactor Diodes MMBV609LT1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q

Minimum Breakdown Voltage:

20 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

1.8

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

250

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

MMBV609LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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