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1N4796

Onsemi

1N4796 by Onsemi

1N4796 by Onsemi is a varactor diode with a min quality factor of 15, max reverse current of 0.005 uA, and nominal capacitance of 47 pF. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

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1k+

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Vyrian

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Digiode

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Native Components

USA . 332 parts In-Stock

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$35.525

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Northwest PG Solutions

USA . 725 parts In-Stock

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TANS Electronics

Latvia . 6,252 parts In-Stock

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Problanco Electronics

Mexico . 4,039 parts In-Stock

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SupplyDigital Components

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Corphita

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UHIMA Technologies

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Kulean Microsystems

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Overview

Enhance the performance of your electronic circuits with the 1N4796 Varactor Diode by Onsemi. Manufactured with top-notch quality and precision, this diode offers a multitude of applications in various industries. With its reliable performance and durable construction, it provides value and benefits that are unmatched. Experience seamless functionality and optimal results with the 1N4796 Varactor Diode - the perfect solution for all your electrical needs.

Feature Benefit Bullets

Minimum Quality Factor: 15

Higher quality factor indicates better performance and stability in high frequency applications.

Package Body Material: GLASS

Glass package provides better protection and stability for the varactor diode.

Config: SINGLE

Single configuration is simple to use and suitable for many applications.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer precise and sharp transition in capacitance changes.

Maximum Reverse Current: 0.005 uA

Low reverse current ensures minimal power loss and better efficiency.

Package Shape: ROUND

Round shape allows for easy mounting and compatibility with standard connectors.

Reverse Test Voltage: 20 V

Higher reverse test voltage ensures reliable operation under reverse bias conditions.

No. of Terminals: 2

Two terminals make it easy to connect and integrate into circuits.

Package Style (Meter): LONG FORM

Long form package provides better heat dissipation and mechanical stability.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for use in various environments and applications.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature ensures functionality in extreme cold conditions.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and conductivity for the terminals.

Terminal Position: AXIAL

Axial terminal position makes it easy to insert and solder in through-hole applications.

Case Connection: ISOLATED

Isolated case connection prevents interference and enhances signal integrity.

Maximum Power Dissipation: 0.5 W

High maximum power dissipation allows for stable operation at higher power levels.

Nominal Diode Capacitance: 47 pF

Nominal capacitance value is suitable for various frequency tuning applications.

Minimum Breakdown Voltage: 22 V

Higher minimum breakdown voltage ensures protection against voltage surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Varactor diodes offer variable capacitance for voltage-controlled tuning applications.

Terminal Form: WIRE

Wire terminal form allows for easy connection and flexibility in circuit layout.

Maximum Repetitive Peak Reverse Voltage: 20 V

High maximum reverse voltage rating ensures durability and reliability in operation.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% provides consistent performance in tuning applications.

Diode Element Material: SILICON

Silicon material offers good thermal stability and reliability for the diode element.

Minimum Diode Capacitance Ratio: 2.33

Higher minimum capacitance ratio allows for a wider range of tuning capabilities.

Technical Specifications

Varactor Diodes 1N4796 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

22 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.33

Nominal Diode Capacitance:

47 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

.005 uA

Reverse Test Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4796 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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