Loading...

1N4792

Onsemi

1N4792 by Onsemi

1N4792 by Onsemi is a varactor diode with 22pF capacitance, 20V breakdown voltage, and 0.5W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 150°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,119 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,119

-

-

-

-

Digiode

USA . 183 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

183

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 726 parts In-Stock

1+ parts

$5.130

100+ parts

-

1k+ parts

-

10k+ parts

-

726

$5.130

-

-

-

Kulean Microsystems

USA . 6,871 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,871

-

-

-

-

Problanco Electronics

Mexico . 2,339 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,339

-

-

-

-

TANS Electronics

Latvia . 2,197 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,197

-

-

-

-

SupplyDigital Components

Austria . 1,067 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,067

-

-

-

-

Corphita

USA . 1,028 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,028

-

-

-

-

Corohmni

South Africa . 442 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

442

-

-

-

-

Northwest PG Solutions

USA . 201 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$5.027

10k+ parts

-

201

-

-

$5.027

-

UHIMA Technologies

Türkiye . 50 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

50

-

-

-

-

Overview

Discover the power of innovation with the Onsemi 1N4792 Varactor Diode. Crafted with precision and expertise by a leading manufacturer, this diode boasts a minimum quality factor of 15 and a variable capacitance design that delivers unparalleled performance. Ideal for applications requiring precise tuning and frequency control, this diode offers superior reliability and functionality. Unlock new possibilities and experience unmatched value with the 1N4792 Varactor Diode from Onsemi.

Feature Benefit Bullets

Minimum Quality Factor: 15

Having a minimum quality factor of 15 indicates the efficiency and effectiveness of the varactor diode in terms of signal processing and tuning.

Package Body Material: GLASS

The glass body material ensures good durability and resistance to external factors, making the varactor diode reliable for long-term use.

Config: SINGLE

The single configuration simplifies the design and integration of the varactor diode into electronic circuits, offering ease of use.

Variable Capacitance Diode Classification: ABRUPT

The abrupt classification implies precise and sharp variations in capacitance, enabling accurate tuning and frequency control in applications.

Maximum Reverse Current: 0.000000005 uA

The extremely low maximum reverse current enhances the efficiency and performance of the varactor diode while minimizing power consumption.

Package Shape: ROUND

The round package shape provides uniform distribution of components and compactness, making the varactor diode suitable for space-constrained applications.

Reverse Test Voltage: 20 V

With a reverse test voltage of 20V, the varactor diode offers robust protection against reverse currents and ensures stable operation.

No. of Terminals: 2

Having two terminals simplifies the connectivity and integration of the varactor diode into circuits, reducing the complexity of wiring.

Package Style (Meter): LONG FORM

The long form package style provides flexibility in mounting and positioning the varactor diode, allowing for versatile installation options.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150 °C enables the varactor diode to withstand elevated temperatures and harsh environments, ensuring reliable performance.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature of -65 °C ensures the varactor diode remains functional in cold conditions or during temperature fluctuations.

Terminal Finish: TIN LEAD

The tin lead terminal finish provides good solderability and conductivity, facilitating easy installation and reliable electrical connections.

Terminal Position: AXIAL

The axial terminal position simplifies the orientation and alignment of the varactor diode during assembly, ensuring proper functionality.

Case Connection: ISOLATED

The isolated case connection enhances the stability and reliability of the varactor diode by reducing interference and crosstalk with other components.

Maximum Power Dissipation: 0.5 W

The maximum power dissipation of 0.5W indicates the capability of the varactor diode to handle high power levels without overheating or degradation.

Nominal Diode Capacitance: 22 pF

The nominal diode capacitance of 22pF offers precise tuning capabilities and optimal performance in frequency-modulation applications.

Minimum Breakdown Voltage: 22 V

The minimum breakdown voltage of 22V ensures reliable operation and protection against voltage surges or spikes, enhancing the durability of the varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product is ideal for applications requiring adjustable capacitance levels for signal processing and tuning.

Terminal Form: WIRE

The wire terminal form offers flexibility in connection and adaptability to various circuit layouts, enhancing the usability of the varactor diode.

Maximum Repetitive Peak Reverse Voltage: 20 V

The maximum repetitive peak reverse voltage of 20V ensures the varactor diode can handle reverse voltages efficiently without compromising performance.

Diode Cap Tolerance: 20 %

The diode cap tolerance of 20% indicates the accuracy and stability of capacitance values in the varactor diode, ensuring consistent performance.

Diode Element Material: SILICON

The silicon diode element material offers excellent performance characteristics, reliability, and compatibility with various circuit configurations.

Minimum Diode Capacitance Ratio: 2.35

The minimum diode capacitance ratio of 2.35 indicates the range of capacitance variation achievable with this varactor diode, providing flexibility in signal processing.

Technical Specifications

Varactor Diodes 1N4792 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

22 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.35

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

.000000005 uA

Reverse Test Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4792 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20