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1N4791

Onsemi

1N4791 by Onsemi

1N4791 by Onsemi is a varactor diode with 18pF nominal capacitance, abrupt variable capacitance classification, and 15 min quality factor. It is used in RF applications for tuning circuits due to its high-quality factor and low reverse current of 0.005uA.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,315 parts In-Stock

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Digiode

USA . 1,307 parts In-Stock

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Native Components

USA . 684 parts In-Stock

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$19.190

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Northwest PG Solutions

USA . 1,255 parts In-Stock

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$21.109

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$18.998

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SupplyDigital Components

Austria . 7,934 parts In-Stock

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Problanco Electronics

Mexico . 7,687 parts In-Stock

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TANS Electronics

Latvia . 4,595 parts In-Stock

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Kulean Microsystems

USA . 1,550 parts In-Stock

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UHIMA Technologies

Türkiye . 783 parts In-Stock

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Corohmni

South Africa . 243 parts In-Stock

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Corphita

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Overview

Experience top-notch performance and reliability with the 1N4791 Varactor Diode by Onsemi. Known for their superior quality and cutting-edge technology, Onsemi delivers products that exceed industry standards. The 1N4791 is ideal for applications requiring precise tuning and frequency control, providing a minimum Quality Factor of 15. With its high efficiency and durable construction, this diode offers customers unmatched value, making it the perfect choice for your electronic projects. Trust Onsemi to bring you the best in Varactor Diodes for all your needs.

Feature Benefit Bullets

Minimum Quality Factor: 15

Higher quality factor indicates better performance and efficiency, making this varactor diode a reliable choice for various applications.

Package Body Material: GLASS

Glass package body material provides superior thermal and mechanical properties, offering better stability and durability for the diode.

Config: SINGLE

Single configuration simplifies the circuit design and ensures easy integration, making it convenient to use in different electronic devices.

Maximum Reverse Current: 0.005 uA

Low maximum reverse current ensures minimal power loss and enhances the efficiency of the diode in electronic circuits.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in a wide range of environmental conditions, making it suitable for diverse applications.

Technical Specifications

Varactor Diodes 1N4791 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

22 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.36

Nominal Diode Capacitance:

18 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

20 V

Maximum Reverse Current:

.005 uA

Reverse Test Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4791 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-21-884-5874, 5961218845874

NIIN

218845874

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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