Loading...

1N4787

Onsemi

1N4787 by Onsemi

1N4787 by Onsemi is a varactor diode with a min quality factor of 15 and max reverse current of 0.005 uA. It has a nominal capacitance of 8.2 pF, making it ideal for applications requiring variable capacitance diodes in circuits with voltage up to 25 V. With an operating temperature range from -65 to 150 °C, this diode is suitable for various electronic devices and RF applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,149 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,149

-

-

-

-

Vyrian

USA . 455 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

455

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 210 parts In-Stock

1+ parts

$55.048

100+ parts

-

1k+ parts

-

10k+ parts

$52.846

210

$55.048

-

-

$52.846

Northwest PG Solutions

USA . 1,183 parts In-Stock

1+ parts

$60.553

100+ parts

-

1k+ parts

-

10k+ parts

-

1,183

$60.553

-

-

-

SupplyDigital Components

Austria . 5,373 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,373

-

-

-

-

Kulean Microsystems

USA . 4,702 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,702

-

-

-

-

Problanco Electronics

Mexico . 3,726 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,726

-

-

-

-

Corphita

USA . 1,041 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,041

-

-

-

-

UHIMA Technologies

Türkiye . 582 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

582

-

-

-

-

TANS Electronics

Latvia . 297 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

297

-

-

-

-

Corohmni

South Africa . 221 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

221

-

-

-

-

Overview

Unlock endless possibilities with the 1N4787 Varactor Diode by Onsemi. Known for its superior quality and reliability, Onsemi has been a trusted manufacturer in the industry. This diode is perfect for applications requiring variable capacitance, offering customers unmatched value and benefits. With a wide range of operating temperatures and low reverse current, this diode is ideal for various electronic projects. Trust Onsemi to provide you with the best-in-class components for your next innovation.

Feature Benefit Bullets

Minimum Quality Factor: 15

A high minimum quality factor indicates better performance and reliability in tuning applications.

Package Body Material: GLASS

Glass package provides good protection and low electrical interference, ensuring better overall performance.

Config: SINGLE

Single configuration makes it easy to integrate into various circuit designs.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures precise and quick capacitance changes, ideal for frequency tuning applications.

Maximum Reverse Current: 0.005 uA

Low reverse current helps in maintaining signal integrity by reducing leakage.

Package Shape: ROUND

Round package shape offers good mechanical strength and easy handling during installation.

Reverse Test Voltage: 25 V

Sufficient reverse test voltage provides a safety margin for the diode in case of voltage spikes.

No. of Terminals: 2

Having only two terminals simplifies the connection and usage of the diode.

Package Style (Meter): LONG FORM

Long form package style allows for better heat dissipation and mechanical stability.

Maximum Operating Temperature: 150 °C

High maximum operating temperature ensures reliable performance in a wide range of environmental conditions.

Minimum Operating Temperature: -65 °C

Low minimum operating temperature indicates versatility in different temperature environments.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and conductivity for efficient connections.

Terminal Position: AXIAL

Axial terminal position simplifies mounting and reduces signal interference.

Case Connection: ISOLATED

Isolated case connection helps in preventing unwanted coupling of signals and improves overall circuit performance.

Maximum Power Dissipation: 0.5 W

Low power dissipation allows for efficient use of the diode in various applications.

Nominal Diode Capacitance: 8.2 pF

Optimal capacitance value for frequency tuning and signal modulation circuits.

Minimum Breakdown Voltage: 28 V

Higher minimum breakdown voltage ensures robustness and protection against voltage surges.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode provides flexibility in tuning applications for different frequency ranges.

Terminal Form: WIRE

Wire terminal form offers easy connectivity and reliability in circuit connections.

Maximum Repetitive Peak Reverse Voltage: 25 V

Max repetitive peak reverse voltage meets safety and performance requirements for typical operating conditions.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% allows flexibility in design and tuning applications.

Diode Element Material: SILICON

Silicon element material offers good performance and stability for the diode.

Minimum Diode Capacitance Ratio: 2.42

Higher minimum capacitance ratio provides wider tuning range and flexibility in frequency adjustments.

Technical Specifications

Varactor Diodes 1N4787 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

28 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.42

Nominal Diode Capacitance:

8.2 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Minimum Quality Factor:

15

Maximum Repetitive Peak Reverse Voltage:

25 V

Maximum Reverse Current:

.005 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N4787 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20