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1N5471

Onsemi

1N5471 by Onsemi

1N5471 by Onsemi is a varactor diode with a min quality factor of 450 and a max reverse current of 0.00000002 uA. It has a nominal capacitance of 39 pF and operates b/w -65 to 175 °C. This diode is used in applications requiring variable capacitance for tuning circuits.

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Digiode

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TANS Electronics

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SupplyDigital Components

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Corphita

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Northwest PG Solutions

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Overview

Enhance your electronic designs with the 1N5471 Varactor Diode from Onsemi. Renowned for their high-quality components, Onsemi delivers superior products that are trusted by professionals worldwide. The 1N5471 is perfect for applications requiring variable capacitance, offering precise and reliable performance. With a wide operating temperature range and low power dissipation, this diode provides exceptional value and efficiency. Upgrade your projects with the 1N5471 and experience the benefits of top-tier technology.

Feature Benefit Bullets

Minimum Quality Factor: 450

Higher quality factor indicates better performance and efficiency of the varactor diode.

Package Body Material: GLASS

Glass package provides better protection and durability for the varactor diode, ensuring long term reliability.

Config: SINGLE

Single configuration simplifies the design and integration of the varactor diode in electronic circuits.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures precise and fast variable capacitance changes, making it suitable for high-frequency applications.

Maximum Reverse Current: 0.00000002 uA

Low reverse current minimizes power loss and improves overall efficiency of the varactor diode.

Package Shape: ROUND

Round shape allows for easy mounting and handling of the varactor diode in various applications.

Reverse Test Voltage: 25 V

Suitable reverse test voltage ensures reliable and safe operation of the varactor diode within specified limits.

No. of Terminals: 2

Having 2 terminals simplifies the connection and integration of the varactor diode in electronic circuits.

Package Style (Meter): LONG FORM

Long form package style provides additional protection and heat dissipation for the varactor diode.

Maximum Operating Temperature: 175 °C

High maximum operating temperature allows the varactor diode to be used in a wide range of environmental conditions.

Minimum Operating Temperature: -65 °C

Wide operating temperature range ensures reliable performance of the varactor diode in extreme conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish offers good solderability and conductivity for the varactor diode connections.

Terminal Position: AXIAL

Axial terminal position facilitates easy installation and connection of the varactor diode in electronic circuits.

Case Connection: ISOLATED

Isolated case connection prevents short circuits and interference, improving the performance of the varactor diode.

Maximum Power Dissipation: 0.4 W

Higher power dissipation capability ensures the varactor diode can handle high power applications effectively.

Nominal Diode Capacitance: 39 pF

Optimal capacitance value makes the varactor diode suitable for various tuning and voltage controlled applications.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage provides protection against voltage surges and ensures the reliability of the varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows the device to be used in voltage-controlled applications and frequency tuning circuits.

Terminal Form: WIRE

Wire terminal form enables easy and secure connections for the varactor diode in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage rating ensures the varactor diode can handle voltage spikes without damage.

Diode Cap Tolerance: 20 %

Capacitance tolerance of 20% provides flexibility in design and tuning applications using the varactor diode.

Diode Element Material: SILICON

Silicon element material offers high reliability and stability for the varactor diode in various operating conditions.

Minimum Diode Capacitance Ratio: 2.9

Higher minimum capacitance ratio allows for greater tuning range and flexibility in voltage-controlled applications.

Technical Specifications

Varactor Diodes 1N5471 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

2.9

Nominal Diode Capacitance:

39 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

450

Maximum Repetitive Peak Reverse Voltage:

30 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

25 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5471 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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