Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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SVC389-TL-E by Onsemi is a Varactor Diode with 2 elements, HYPERABRUPT classification, and 497.5 pF nominal capacitance. It operates in medium frequency bands, has a common cathode configuration, and is suitable for applications requiring variable capacitance diodes in small outline packages.
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Higher quality factor means better performance and stability, making this varactor diode a reliable choice for various applications.
The plastic/epoxy package provides good protection and insulation, ensuring the durability and reliability of the varactor diode.
Common cathode configuration with 2 elements allows for efficient voltage control and tuning capabilities in electronic circuits.
Hyperabrupt varactor diodes offer precise and rapid changes in capacitance, ideal for frequency modulation and tuning applications.
Designed for medium frequency range, this varactor diode is suitable for use in communications, radar systems, and other applications operating in this band.
Surface mount capability allows for easy and efficient integration onto circuit boards, saving space and simplifying assembly processes.
Low reverse current ensures minimal power loss and improved efficiency in circuit designs using this varactor diode.
Rectangular package shape facilitates easy mounting and alignment, making it convenient for PCB layout and assembly.
With a reverse test voltage of 9V, this varactor diode can withstand typical reverse voltage conditions without breakdown.
Three terminals enable easy connection and control of the varactor diode in electronic circuits, providing flexibility in circuit designs.
Small outline package style saves space and allows for compact designs, ideal for applications where size constraints are critical.
High maximum operating temperature of 150°C ensures reliability and performance in a wide range of operating conditions.
Tin/bismuth terminal finish offers good solderability and corrosion resistance, enhancing the durability and lifespan of the varactor diode.
Dual terminal position provides easy and secure mounting on PCBs, ensuring stable connections and reliable performance.
The nominal capacitance value of 497.5 pF allows for precise tuning and adjustment of capacitance in electronic circuits using this varactor diode.
High minimum breakdown voltage of 16V ensures reliable operation and protection against voltage spikes or transients in the circuit.
As a variable capacitance diode, this product offers adjustable capacitance for frequency tuning and modulation applications, providing versatility in circuit design.
Gull wing terminal form allows for easy surface mounting and soldering, ensuring secure connections and reliable performance in electronic circuits.
Having 2 elements provides increased control and flexibility in voltage tuning applications, making this varactor diode suitable for various circuit designs.
The maximum repetitive peak reverse voltage of 16V ensures protection against reverse voltage spikes, enhancing the reliability and longevity of the varactor diode.
Tight diode capacitance tolerance of 5.53% ensures consistent and accurate performance in frequency modulation and tuning applications.
Silicon diode element material provides stable and reliable performance, making this varactor diode a durable and long-lasting choice for electronic circuits.
A minimum capacitance ratio of 19.5 allows for precise and wide-ranging capacitance adjustment, making this varactor diode versatile for various application requirements.
Varactor Diodes SVC389-TL-E attributes and parameters. Explore more Varactor Diodes devices from Onsemi
Minimum Breakdown Voltage:
Config:
Diode Cap Tolerance:
Minimum Diode Capacitance Ratio:
Nominal Diode Capacitance:
Diode Element Material:
Diode Type:
Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Minimum Quality Factor:
Maximum Repetitive Peak Reverse Voltage:
Maximum Reverse Current:
Reverse Test Voltage:
Surface Mount:
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Variable Capacitance Diode Classification:
SVC389-TL-E Diodes trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.10.00.80
SB
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
BSS84-7-F
SPC TECHNOLOGY/ MULTICOMP
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;
1N4148
Hitachi
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
FDD5614P
Onsemi
FDD5614P by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 45A IDM and 0.1 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 175°C. The PLASTIC/EPOXY package with GULL WING terminals ensures efficient heat dissipation and reliable performance.
BSS138
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Drain Current (Abs) (ID): .2 A; Maximum Feedback Capacitance (Crss): 8 pF;
LM555CM
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N5819HW-7-F
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM358N
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
2N7002
Weitron Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Terminal Finish: TIN LEAD; Maximum Operating Temperature: 150 Cel;
2N2222A
Minilogic Device
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .001 A;
NDT2955
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3 W; JESD-609 Code: e0; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Rectron
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; No. of Elements: 1; Transistor Application: SWITCHING;
USB2514BI-AEZG
Standard Microsystems
BUS CONTROLLER, UNIVERSAL SERIAL BUS; Temperature Grade: INDUSTRIAL; Terminal Form: NO LEAD; No. of Terminals: 36; Package Code: HVQCCN; Package Shape: SQUARE;
SMBJ18CA
Yangzhou Yangjie Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.05 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
STM32H750VBT6
STMicroelectronics
STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.
BSS138LT1G
BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.
LM358AN
BAV99
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Sangdest Microelectronics (Nanjing)
SS14
Bytesonic Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MV104RL
MV104RL by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 100 and a Nominal Capacitance of 39.5 pF. Commonly used in RF applications, it has a Max Operating Temperature of 125 °C and a Min Breakdown Voltage of 32V.
BB149,135
NXP Semiconductors
BB149,135 by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a nominal capacitance of 18.75 pF, operates b/w -55 °C to 125 °C, and has a max reverse voltage of 30 V. Ideal for tuning circuits and RF applications, it comes in a compact surface mount package.
MDX644
Texas Instruments
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 20 V; Minimum Quality Factor: 33; Nominal Diode Capacitance: .9 pF;
BB158
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB173LX
VARIABLE CAPACITANCE DIODE; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;
BB150-T
MDX596N
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 15; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF;
MA46H202-1056
Mx Com
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 2000; Maximum Repetitive Peak Reverse Voltage: 22 V; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;
934053250115
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB804R235
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
MV2109RLRE
MV2109RLRE by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and breakdown voltage of 30 V. It is ideal for applications requiring variable capacitance in electronic circuits, such as tuning RF filters or oscillators.
MV7404T1
MV7404T1 by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200, ideal for very high frequency applications. It features a nominal capacitance of 120 pF, breakdown voltage of 12 V, and max power dissipation of 0.8 W. This surface-mount diode in small outline package is designed for high-frequency circuit tuning.
BB182LX
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BB179-T
BB201,215
NXP Semiconductors' BB201,215 is a varactor diode with 95pF capacitance and 15V peak reverse voltage. Commonly used in RF applications due to its variable capacitance feature, it operates b/w -55°C to 125°C. This small outline diode has a gull wing terminal form and is surface mountable for easy integration.
933215290135
MV1404
The Onsemi MV1404 is a single hyperabrupt varactor diode with 120pF nominal capacitance, 12V breakdown voltage, and 200 min quality factor. It is used in applications requiring variable capacitance control at temperatures up to 125 °C, such as RF tuning circuits.
MMVL3102T1
MMVL3102T1 by Onsemi is a varactor diode with a min quality factor of 200, ideal for very high frequency applications. It has a nominal capacitance of 22 pF and a breakdown voltage of 30 V, making it suitable for small outline packages in RF circuits. With gull wing terminals and tin/lead finish, this diode offers precise variable capacitance control.
BB145BT/R
MMBV432LT1G
MMBV432LT1G by Onsemi is a varactor diode with common cathode, 2 elements configuration. It has a min quality factor of 100 and nominal capacitance of 45.55 pF, suitable for very high frequency applications like RF tuning circuits.
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SVC353R
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 6; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC323
VARIABLE CAPACITANCE DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Surface Mount: NO; Package Shape: RECTANGULAR;
SVC321SP
VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Minimum Quality Factor: 200; Nominal Diode Capacitance: 459 pF; Maximum Repetitive Peak Reverse Voltage: 8 V;
SVC344
VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: WIRE; No. of Terminals: 3; Surface Mount: NO; Package Shape: ROUND;
SVC342
SVC321SPAC
VARIABLE CAPACITANCE DIODE; Terminal Position: SINGLE; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;
SVC353S
SVC321B
VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
SVC325
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 52 pF; Minimum Quality Factor: 200; Maximum Repetitive Peak Reverse Voltage: 16 V;
SVC321SPA
SVC342M
VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 485 pF; Minimum Quality Factor: 200; Maximum Repetitive Peak Reverse Voltage: 16 V;
SVC342K
VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Minimum Quality Factor: 200; Nominal Diode Capacitance: 439 pF; Maximum Repetitive Peak Reverse Voltage: 16 V;
SVC321SPAB
SVC346
VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Surface Mount: NO; Package Shape: ROUND;
SVC321D
SVC321SPAD
SVC321A
SVC321C
SVC321SPAA
SVC342L
VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Minimum Quality Factor: 200; Maximum Repetitive Peak Reverse Voltage: 16 V; Nominal Diode Capacitance: 461 pF;
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