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SVC389-TL-E

Onsemi

SVC389-TL-E by Onsemi

SVC389-TL-E by Onsemi is a Varactor Diode with 2 elements, HYPERABRUPT classification, and 497.5 pF nominal capacitance. It operates in medium frequency bands, has a common cathode configuration, and is suitable for applications requiring variable capacitance diodes in small outline packages.

Median Price

$0.674

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 173,113 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.570

10k+ parts

-

173,113

-

-

$0.570

-

Rochester

USA . 144,823 parts In-Stock

1+ parts

-

100+ parts

$0.674

1k+ parts

$0.559

10k+ parts

$0.498

144,823

-

$0.674

$0.559

$0.498

Verical

USA . 105,830 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.699

10k+ parts

$0.623

105,830

-

-

$0.699

$0.623

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,741 parts In-Stock

1+ parts

$0.524

100+ parts

-

1k+ parts

-

10k+ parts

-

1,741

$0.524

-

-

-

Vyrian

USA . 97 parts In-Stock

1+ parts

$0.552

100+ parts

-

1k+ parts

-

10k+ parts

-

97

$0.552

-

-

-

DigiKey Marketplace

USA . 173,113 parts In-Stock

1+ parts

-

100+ parts

$0.570

1k+ parts

-

10k+ parts

-

173,113

-

$0.570

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 149 parts In-Stock

1+ parts

$0.406

100+ parts

-

1k+ parts

-

10k+ parts

-

149

$0.406

-

-

-

Corphita

USA . 1,790 parts In-Stock

1+ parts

$0.497

100+ parts

-

1k+ parts

-

10k+ parts

-

1,790

$0.497

-

-

-

Microchip USA

USA . 484 parts In-Stock

1+ parts

$3.445

100+ parts

-

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-

10k+ parts

-

484

$3.445

-

-

-

Continental Prestige Electronics

USA . 111,884 parts In-Stock

1+ parts

-

100+ parts

$0.442

1k+ parts

-

10k+ parts

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111,884

-

$0.442

-

-

TANS Electronics

Latvia . 7,487 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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7,487

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Problanco Electronics

Mexico . 7,413 parts In-Stock

1+ parts

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100+ parts

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7,413

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-

-

-

Metaverse IC Inc.

Canada . 2,240 parts In-Stock

1+ parts

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100+ parts

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2,240

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Kulean Microsystems

USA . 1,640 parts In-Stock

1+ parts

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100+ parts

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1,640

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-

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UHIMA Technologies

Türkiye . 727 parts In-Stock

1+ parts

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100+ parts

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727

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SupplyDigital Components

Austria . 403 parts In-Stock

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403

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Overview

Unlock the power of precision tuning with the SVC389-TL-E by Onsemi. As a leading manufacturer in varactor diodes, Onsemi ensures top-notch quality and reliability in every product. Ideal for medium frequency applications, this hyperabrupt variable capacitance diode offers customers a seamless tuning experience with its common cathode configuration and dual terminal position. With a minimum quality factor of 200, the SVC389-TL-E delivers exceptional performance at an unbeatable value. Experience the benefits of superior design and efficiency with Onsemi's innovative varactor diode technology.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor means better performance and stability, making this varactor diode a reliable choice for various applications.

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package provides good protection and insulation, ensuring the durability and reliability of the varactor diode.

Config: COMMON CATHODE, 2 ELEMENTS

Common cathode configuration with 2 elements allows for efficient voltage control and tuning capabilities in electronic circuits.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt varactor diodes offer precise and rapid changes in capacitance, ideal for frequency modulation and tuning applications.

Frequency Band: MEDIUM FREQUENCY

Designed for medium frequency range, this varactor diode is suitable for use in communications, radar systems, and other applications operating in this band.

Surface Mount: YES

Surface mount capability allows for easy and efficient integration onto circuit boards, saving space and simplifying assembly processes.

Maximum Reverse Current: 0.1 uA

Low reverse current ensures minimal power loss and improved efficiency in circuit designs using this varactor diode.

Package Shape: RECTANGULAR

Rectangular package shape facilitates easy mounting and alignment, making it convenient for PCB layout and assembly.

Reverse Test Voltage: 9 V

With a reverse test voltage of 9V, this varactor diode can withstand typical reverse voltage conditions without breakdown.

No. of Terminals: 3

Three terminals enable easy connection and control of the varactor diode in electronic circuits, providing flexibility in circuit designs.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space and allows for compact designs, ideal for applications where size constraints are critical.

Maximum Operating Temperature: 150 °C

High maximum operating temperature of 150°C ensures reliability and performance in a wide range of operating conditions.

Terminal Finish: Tin/Bismuth (Sn/Bi)

Tin/bismuth terminal finish offers good solderability and corrosion resistance, enhancing the durability and lifespan of the varactor diode.

Terminal Position: DUAL

Dual terminal position provides easy and secure mounting on PCBs, ensuring stable connections and reliable performance.

Nominal Diode Capacitance: 497.5 pF

The nominal capacitance value of 497.5 pF allows for precise tuning and adjustment of capacitance in electronic circuits using this varactor diode.

Minimum Breakdown Voltage: 16 V

High minimum breakdown voltage of 16V ensures reliable operation and protection against voltage spikes or transients in the circuit.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance for frequency tuning and modulation applications, providing versatility in circuit design.

Terminal Form: GULL WING

Gull wing terminal form allows for easy surface mounting and soldering, ensuring secure connections and reliable performance in electronic circuits.

No. of Elements: 2

Having 2 elements provides increased control and flexibility in voltage tuning applications, making this varactor diode suitable for various circuit designs.

Maximum Repetitive Peak Reverse Voltage: 16 V

The maximum repetitive peak reverse voltage of 16V ensures protection against reverse voltage spikes, enhancing the reliability and longevity of the varactor diode.

Diode Cap Tolerance: 5.53 %

Tight diode capacitance tolerance of 5.53% ensures consistent and accurate performance in frequency modulation and tuning applications.

Diode Element Material: SILICON

Silicon diode element material provides stable and reliable performance, making this varactor diode a durable and long-lasting choice for electronic circuits.

Minimum Diode Capacitance Ratio: 19.5

A minimum capacitance ratio of 19.5 allows for precise and wide-ranging capacitance adjustment, making this varactor diode versatile for various application requirements.

Technical Specifications

Varactor Diodes SVC389-TL-E attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Cap Tolerance:

5.53 %

Minimum Diode Capacitance Ratio:

19.5

Nominal Diode Capacitance:

497.5 pF

Diode Element Material:

SILICON

Frequency Band:

MEDIUM FREQUENCY

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

9 V

Surface Mount:

YES

Terminal Finish:

Tin/Bismuth (Sn/Bi)

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

SVC389-TL-E Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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