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SVC321D

Onsemi

SVC321D by Onsemi

The Onsemi SVC321D is a single varactor diode with a min quality factor of 200, ideal for applications requiring variable capacitance. With a max reverse current of 0.1 uA and a min breakdown voltage of 16 V, it operates at temperatures up to 100 °C, making it suitable for RF tuning circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,241 parts In-Stock

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Digiode

USA . 1,598 parts In-Stock

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TANS Electronics

Latvia . 6,852 parts In-Stock

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SupplyDigital Components

Austria . 6,109 parts In-Stock

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Kulean Microsystems

USA . 3,441 parts In-Stock

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Corphita

USA . 1,914 parts In-Stock

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Problanco Electronics

Mexico . 1,333 parts In-Stock

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UHIMA Technologies

Türkiye . 891 parts In-Stock

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Corohmni

South Africa . 132 parts In-Stock

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Overview

Enhance your electronic designs with the top-quality SVC321D Varactor Diode by Onsemi. Known for their precision engineering and reliability, Onsemi delivers cutting-edge solutions for various applications. The SVC321D offers a high minimum quality factor of 200, ensuring superior performance. Its variable capacitance and low reverse current make it ideal for frequency tuning and voltage-controlled oscillators. Trust Onsemi to provide you with exceptional products that bring value and efficiency to your projects.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and stability, making this varactor diode a reliable choice for precision applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy package provides good insulation properties and mechanical strength, ensuring durability and protection for the diode.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various electronic applications.

Maximum Reverse Current: 0.1 uA

Low reverse current minimizes power dissipation and improves efficiency, ideal for low power consumption devices.

Package Shape: ROUND

Round shape allows for easy mounting and efficient heat dissipation, making it suitable for compact designs.

Reverse Test Voltage: 9 V

9V reverse test voltage ensures reliable performance and protection against reverse voltage breakdown.

No. of Terminals: 2

Two terminals offer simple connection and compatibility with standard circuit layouts, enhancing usability.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact and space-saving design, making it suitable for applications with limited space.

Maximum Operating Temperature: 100 °C

High maximum operating temperature allows for use in harsh environments or applications where temperature fluctuations occur.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and soldering, improving ease of assembly and maintenance.

Minimum Breakdown Voltage: 16 V

Higher minimum breakdown voltage ensures reliable operation and protection against voltage spikes, making it suitable for demanding applications.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for tuning or frequency control in RF applications, offering versatility and flexibility in circuit design.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides secure and reliable connections, suitable for applications where mechanical stress or vibrations are a concern.

Maximum Repetitive Peak Reverse Voltage: 16 V

High maximum repetitive peak reverse voltage ensures long-term reliability and protection against reverse voltage spikes.

Diode Cap Tolerance: 3 %

Low diode capacitance tolerance ensures accurate tuning and stability in variable capacitance applications, improving overall performance.

Diode Element Material: SILICON

Silicon diode element material offers high reliability, low leakage current, and stable performance over a wide temperature range.

Minimum Diode Capacitance Ratio: 15.5

Higher minimum capacitance ratio allows for greater tuning range and flexibility in frequency control applications, enhancing versatility.

Technical Specifications

Varactor Diodes SVC321D attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

SINGLE

Diode Cap Tolerance:

3 %

Minimum Diode Capacitance Ratio:

15.5

Diode Element Material:

SILICON

JESD-30 Code:

O-PBCY-T2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

9 V

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

SVC321D Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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