Loading...

SVC321SPAC

Onsemi

SVC321SPAC by Onsemi

The Onsemi SVC321SPAC is a single varactor diode with a min quality factor of 200 and a max reverse current of 0.1 uA. It has a package style of in-line and is ideal for applications requiring variable capacitance diodes, such as RF tuning circuits in electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,026 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,026

-

-

-

-

Vyrian

USA . 887 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

887

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 7,593 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,593

-

-

-

-

Kulean Microsystems

USA . 6,950 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,950

-

-

-

-

Problanco Electronics

Mexico . 4,023 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,023

-

-

-

-

TANS Electronics

Latvia . 3,081 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,081

-

-

-

-

UHIMA Technologies

Türkiye . 548 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

548

-

-

-

-

Corohmni

South Africa . 313 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

313

-

-

-

-

Corphita

USA . 103 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

103

-

-

-

-

Overview

Unlock the power of innovation with the SVC321SPAC Varactor Diode by Onsemi. With a minimum quality factor of 200 and maximum reverse current of 0.1uA, this diode offers unparalleled performance and reliability. Designed with precision and expertise, Onsemi's reputation for excellence ensures that you are getting a top-quality product. From tuning circuits to frequency modulators, the applications of this diode are endless. Experience the value and benefits of the SVC321SPAC today and take your projects to new heights.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high quality factor ensures efficient performance and reliable operation, making this varactor diode a good choice for applications where precise voltage control is required.

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides a strong and durable casing, protecting the diode from external elements and ensuring long-term functionality.

Maximum Reverse Current: 0.1 uA

Low reverse current minimizes power losses and improves overall efficiency, making this varactor diode suitable for low power consumption applications.

Reverse Test Voltage: 9 V

With a reverse test voltage of 9 V, this varactor diode can safely handle reverse voltage conditions, ensuring optimal performance and reliability.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature of 100 °C allows this varactor diode to be used in a wide range of environments without compromising performance.

Minimum Breakdown Voltage: 16 V

The high minimum breakdown voltage of 16 V ensures the diode can withstand high voltage conditions, making it a reliable choice for voltage regulation applications.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers the flexibility to adjust capacitance as needed, making it suitable for applications that require variable voltage control.

Diode Element Material: SILICON

Silicon is a commonly used material for diode elements due to its high thermal conductivity and reliability, ensuring stable performance over a wide temperature range.

Technical Specifications

Varactor Diodes SVC321SPAC attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

SINGLE

Diode Cap Tolerance:

3 %

Minimum Diode Capacitance Ratio:

15.5

Diode Element Material:

SILICON

JESD-30 Code:

R-PSIP-T2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

100 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

IN-LINE

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

9 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

SVC321SPAC Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20