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SVC354S

Onsemi

SVC354S by Onsemi

The Onsemi SVC354S is a Varactor Diode with a Min Quality Factor of 200, Breakdown Voltage of 16V, and Capacitance Ratio of 17.5. It is used in RF applications for frequency tuning due to its Variable Capacitance property and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,214 parts In-Stock

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Digiode

USA . 956 parts In-Stock

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Kulean Microsystems

USA . 8,296 parts In-Stock

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8,296

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SupplyDigital Components

Austria . 7,463 parts In-Stock

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Problanco Electronics

Mexico . 5,910 parts In-Stock

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TANS Electronics

Latvia . 5,376 parts In-Stock

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Corphita

USA . 1,850 parts In-Stock

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1,850

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Corohmni

South Africa . 488 parts In-Stock

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UHIMA Technologies

Türkiye . 459 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the SVC354S Varactor Diode by Onsemi. Crafted with precision and expertise, this diode offers unparalleled quality and performance in a compact package. Ideal for a wide range of applications, this diode is designed to deliver superior results, with a minimum Quality Factor of 200 and a minimum Breakdown Voltage of 16V. Experience the difference with Onsemi's SVC354S and elevate your projects to new heights of excellence.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high minimum quality factor ensures efficient and stable performance of the varactor diode in various applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good mechanical protection and insulation for the diode, enhancing its durability and reliability.

Config: COMPLEX

The complex configuration allows for versatile usage and compatibility with different circuit designs and applications.

Surface Mount: YES

Being surface mountable makes the varactor diode easier to install and saves space on the circuit board, making it ideal for compact electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape offers easy integration into the circuit layout and efficient use of space on the PCB.

No. of Terminals: 6

Having 6 terminals allows for more connectivity options and flexibility in circuit design, enabling the diode to be used in a variety of applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style ensures a compact form factor and easy integration into modern electronic devices with limited space.

Terminal Position: DUAL

The dual terminal position provides stability and efficient signal flow, contributing to the overall performance of the varactor diode.

Minimum Breakdown Voltage: 16 V

A minimum breakdown voltage of 16V ensures the diode can handle high voltages without failure, making it suitable for a wide range of voltage applications.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers precise control over capacitance values, making it ideal for voltage-controlled oscillators and frequency tuning applications.

Terminal Form: GULL WING

The gull wing terminal form provides secure connections and ease of soldering during installation, ensuring reliable performance in diverse operating conditions.

No. of Elements: 3

Having 3 elements allows for enhanced functionality and versatility in circuit design, enabling more complex applications and configurations.

Maximum Repetitive Peak Reverse Voltage: 16 V

With a maximum repetitive peak reverse voltage of 16V, this diode can withstand reverse voltage stress and ensure long-lasting performance in various electronic circuits.

Diode Cap Tolerance: 3.31 %

The low diode capacitance tolerance of 3.31% ensures accurate and consistent capacitance values, critical for stable circuit operation and performance.

Diode Element Material: SILICON

Utilizing silicon as the diode element material provides excellent electrical properties, temperature stability, and reliability, making it suitable for demanding applications.

Minimum Diode Capacitance Ratio: 17.5

The minimum diode capacitance ratio of 17.5 indicates a wide range of variable capacitance values, enabling precise tuning and frequency control in RF and microwave circuits.

Technical Specifications

Varactor Diodes SVC354S attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

16 V

Config:

COMPLEX

Diode Cap Tolerance:

3.31 %

Minimum Diode Capacitance Ratio:

17.5

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-G6

No. of Elements:

3

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

16 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Trade Compliance

SVC354S Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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