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1N5706

Onsemi

1N5706 by Onsemi

1N5706 by Onsemi is a varactor diode with 47pF capacitance, 65V breakdown voltage, and 0.00000002uA reverse current. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 °C to 175°C.

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Digiode

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Vyrian

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Mil-Aero Solutions, Inc.

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Native Components

USA . 208 parts In-Stock

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Northwest PG Solutions

USA . 469 parts In-Stock

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Kulean Microsystems

USA . 4,597 parts In-Stock

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SupplyDigital Components

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TANS Electronics

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Problanco Electronics

Mexico . 2,068 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 404 parts In-Stock

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Overview

Unlock a world of possibilities with the Onsemi 1N5706 Varactor Diode. Manufactured by industry leader Onsemi, this diode offers superior quality and reliability. Ideal for applications where variable capacitance is needed, this diode is a game-changer in the electronics industry. With a minimum quality factor of 300 and a maximum reverse current of 0.00000002 uA, the 1N5706 provides unmatched performance. Whether you're working on telecommunications, radar systems, or voltage-controlled oscillators, this diode is sure to meet your needs. Say goodbye to compromised quality and hello to top-notch performance with the Onsemi 1N5706 Varactor Diode.

Feature Benefit Bullets

Minimum Quality Factor: 300

A higher quality factor indicates better performance and stability in radio frequency applications, making this varactor diode a reliable choice for communication systems.

Package Body Material: GLASS

Glass packaging provides enhanced thermal stability, moisture resistance, and durability, making this varactor diode suitable for a wide range of operating conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration, making this varactor diode easy to use and suitable for various applications.

Variable Capacitance Diode Classification: ABRUPT

Abrupt varactor diodes offer precise and rapid capacitance changes, making them ideal for frequency tuning applications where fast response is required.

Maximum Reverse Current: 0.00000002 uA

Low reverse current ensures minimal power loss and improved efficiency in circuit operation, making this varactor diode energy-efficient.

Package Shape: ROUND

Round packaging allows for easy mounting and handling, making this varactor diode convenient for installation in various electronic devices.

Reverse Test Voltage: 60 V

With a high reverse test voltage, this varactor diode can withstand reverse bias conditions effectively, ensuring reliable performance in demanding applications.

No. of Terminals: 2

Two terminals simplify the connection and integration of this varactor diode into circuits, enhancing ease of use and compatibility with standard designs.

Package Style (Meter): LONG FORM

Long-form packaging provides additional protection and space for the varactor diode, ensuring robust construction and longevity in rugged environments.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature, this varactor diode can withstand elevated temperatures without performance degradation, ensuring reliability in harsh conditions.

Minimum Operating Temperature: -65 °C

The wide operating temperature range makes this varactor diode suitable for use in both extreme cold and hot environments, enhancing its versatility.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and conductivity, facilitating easy assembly and reliable electrical connections in circuit applications.

Terminal Position: AXIAL

Axial terminal positioning simplifies PCB mounting and alignment, making this varactor diode suitable for through-hole assembly and ensuring proper orientation in circuits.

Case Connection: ISOLATED

Isolated case connection provides electrical insulation and prevents signal interference, enhancing the performance and reliability of this varactor diode in high-frequency circuits.

Maximum Power Dissipation: 0.4 W

With a maximum power dissipation of 0.4W, this varactor diode can handle high power levels without overheating, ensuring stable operation in power-intensive applications.

Nominal Diode Capacitance: 47 pF

The nominal capacitance value of 47 pF enables precise tuning and modulation of the capacitance, making this varactor diode ideal for frequency control and signal processing.

Minimum Breakdown Voltage: 65 V

The high minimum breakdown voltage ensures reliable operation and protection against voltage surges, making this varactor diode suitable for high-voltage applications.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers adjustable capacitance levels, making it versatile for frequency tuning, voltage-controlled oscillators, and phase-locked loop circuits.

Terminal Form: WIRE

Wire terminals simplify the connection and installation of this varactor diode, providing flexibility in circuit design and compatibility with various connection methods.

Maximum Repetitive Peak Reverse Voltage: 60 V

With a high peak reverse voltage rating, this varactor diode can handle reverse voltage spikes effectively, ensuring reliable performance in voltage-sensitive applications.

Diode Cap Tolerance: 20 %

A tight capacitance tolerance of 20% ensures consistent performance and accurate tuning capabilities, making this varactor diode suitable for precision applications.

Diode Element Material: SILICON

Silicon diode element material offers high reliability, stability, and performance, making this varactor diode well-suited for long-term operation in critical electronic systems.

Minimum Diode Capacitance Ratio: 3.2

The minimum capacitance ratio of 3.2 indicates a wide tuning range and versatile capacitance adjustment, making this varactor diode suitable for a variety of frequency tuning applications.

Technical Specifications

Varactor Diodes 1N5706 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

65 V

Case Connection:

ISOLATED

Config:

SINGLE

Diode Cap Tolerance:

20 %

Minimum Diode Capacitance Ratio:

3.2

Nominal Diode Capacitance:

47 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-7

JESD-30 Code:

O-LALF-W2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Minimum Quality Factor:

300

Maximum Repetitive Peak Reverse Voltage:

60 V

Maximum Reverse Current:

.00000002 uA

Reverse Test Voltage:

60 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

1N5706 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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