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TIV308

Texas Instruments

TIV308 by Texas Instruments

TIV308 by Texas Instruments is a Varactor Diode with 11 pF capacitance, 20 V breakdown voltage, and 200 min quality factor. It is ideal for applications requiring variable capacitance diodes in isolated axial configurations with a max power dissipation of 0.25 W.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,753 parts In-Stock

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Vyrian

USA . 3,509 parts In-Stock

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3,509

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Distributors (Availability)

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Ampacity Inc.

Singapore . 605 parts In-Stock

1+ parts

$0.010

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605

$0.010

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Parana Technologies

USA . 3 parts In-Stock

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$0.065

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$1.439

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3

$0.065

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$1.439

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DigiPath Technology Company

USA . 390 parts In-Stock

1+ parts

$0.072

100+ parts

$0.066

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390

$0.072

$0.066

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ChromeModa Solutions

Germany . 2,407 parts In-Stock

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$0.073

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$0.060

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2,407

$0.073

$0.060

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IDEA Electronic Components Group

UK . 570 parts In-Stock

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$0.073

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$0.066

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570

$0.073

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$0.066

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Semicontronic

India . 906 parts In-Stock

1+ parts

$1.010

100+ parts

$0.985

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$0.980

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906

$1.010

$0.985

$0.980

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One Stop Electronics

USA . 352 parts In-Stock

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$1.010

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352

$1.010

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AZTECH Wire

Italy . 751 parts In-Stock

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$19.621

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751

$19.621

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Corphita

USA . 1,610 parts In-Stock

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Corohmni

South Africa . 204 parts In-Stock

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Overview

Unlock endless possibilities with the TIV308 Varactor Diode by Texas Instruments. Renowned for their superior quality and innovation, Texas Instruments delivers a cutting-edge product that exceeds industry standards. Ideal for applications requiring high-quality factor and variable capacitance, this diode offers unmatched performance and reliability. Experience seamless integration and unparalleled efficiency with the TIV308, setting new benchmarks in the world of electronics. Elevate your projects and unleash your creativity with the TIV308 Varactor Diode from Texas Instruments.

Feature Benefit Bullets

Minimum Quality Factor: 200

A high quality factor indicates that this varactor diode has excellent signal-to-noise ratio and frequency stability, making it a reliable choice for signal processing applications.

Package Body Material: CERAMIC, GLASS-SEALED

The use of high-quality ceramic and glass-sealed materials ensures the durability and reliability of the varactor diode, making it suitable for harsh environmental conditions.

Config: SINGLE

The single configuration simplifies the circuit design and allows for easy integration into various electronic systems, making it a versatile choice for different applications.

Package Shape: ROUND

The round shape of the package provides uniform distribution of stress and heat dissipation, enhancing the overall performance and longevity of the varactor diode.

No. of Terminals: 2

Having only two terminals simplifies the connection and installation process, making it easier for users to integrate this varactor diode into their circuits.

Package Style (Meter): LONG FORM

The long form package style allows for easy handling and installation, making it a user-friendly choice for engineers and technicians working on electronic projects.

Terminal Position: AXIAL

The axial terminal position ensures straightforward connection and alignment, reducing the risk of errors during installation and improving overall efficiency.

Case Connection: ISOLATED

An isolated case connection helps prevent short circuits and interference, ensuring the reliability and stability of the varactor diode in diverse operating conditions.

Maximum Power Dissipation: 0.25 W

With a maximum power dissipation of 0.25 W, this varactor diode can effectively handle moderate power levels without the risk of overheating or performance degradation.

Nominal Diode Capacitance: 11 pF

The nominal capacitance of 11 pF indicates the ability of this varactor diode to provide precise and consistent capacitance values, making it suitable for frequency tuning and signal modulation applications.

Minimum Breakdown Voltage: 20 V

A minimum breakdown voltage of 20 V ensures the protection of the varactor diode against voltage spikes and surges, enhancing its durability and reliability in demanding operating conditions.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, this product offers dynamic tuning capabilities, allowing for precise control of capacitance values and frequency modulation in electronic circuits.

Terminal Form: WIRE

The wire terminal form provides a secure and stable connection for the varactor diode, ensuring consistent performance and reliability in various electronic applications.

Maximum Repetitive Peak Reverse Voltage: 20 V

The maximum repetitive peak reverse voltage of 20 V indicates the varactor diode's ability to withstand reverse voltage without breakdown, ensuring its longevity and reliability in reverse-biased applications.

Diode Element Material: SILICON

Silicon is a common and reliable material choice for diode elements due to its excellent electrical properties and durability, making this varactor diode a dependable component for electronic circuits.

Minimum Diode Capacitance Ratio: 2.4

A minimum diode capacitance ratio of 2.4 indicates the varactor diode's ability to provide a wide range of capacitance values for frequency tuning and modulation applications, adding versatility to the product.

Technical Specifications

Varactor Diodes TIV308 attributes and parameters. Explore more Varactor Diodes devices from Texas Instruments

Specs

Minimum Breakdown Voltage:

20 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

2.4

Nominal Diode Capacitance:

11 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-GALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TIV308 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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