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TIV306

Texas Instruments

TIV306 by Texas Instruments

TIV306 by Texas Instruments is a single varactor diode with a min quality factor of 200, ideal for applications requiring variable capacitance. With a nominal capacitance of 7 pF and breakdown voltage of 20 V, it offers high performance in RF tuning circuits. The diode's ceramic package and isolated case connection ensure reliable operation with a max power dissipation of 0.25 W.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,350 parts In-Stock

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3,350

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Digiode

USA . 2,893 parts In-Stock

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2,893

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Electronic Expediters

USA . 490 parts In-Stock

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490

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 824 parts In-Stock

1+ parts

$0.014

100+ parts

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1k+ parts

$1.407

10k+ parts

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824

$0.014

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$1.407

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DigiPath Technology Company

USA . 23 parts In-Stock

1+ parts

$0.016

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$0.014

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23

$0.016

$0.014

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ChromeModa Solutions

Germany . 5,707 parts In-Stock

1+ parts

$0.016

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$0.013

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5,707

$0.016

$0.013

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IDEA Electronic Components Group

UK . 996 parts In-Stock

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$0.016

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$0.014

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996

$0.016

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$0.014

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One Stop Electronics

USA . 376 parts In-Stock

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$2.010

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376

$2.010

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AZTECH Wire

Italy . 394 parts In-Stock

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$19.143

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394

$19.143

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Corphita

USA . 736 parts In-Stock

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736

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Overview

Unlock endless possibilities with the TIV306 Varactor Diode by Texas Instruments. Renowned for their quality and reliability, Texas Instruments delivers cutting-edge technology in a compact package. Ideal for applications requiring precise tuning and frequency control, this diode offers a minimum quality factor of 200 and a low power dissipation of 0.25 W. With a nominal capacitance of 7 pF and a minimum breakdown voltage of 20 V, the TIV306 provides unmatched performance and value for your electronic projects. Experience superior quality and precision with Texas Instruments today.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor ensures better performance and stability of the varactor diode, making it a reliable choice for various applications.

Package Body Material: CERAMIC, GLASS-SEALED

The use of ceramic and glass-sealed package body material provides excellent mechanical protection and ensures the reliability and durability of the varactor diode.

Config: SINGLE

Single configuration simplifies the design and integration process, making it easier to use in various electronic circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and handling, making it convenient for use in different applications.

No. of Terminals: 2

Having 2 terminals makes the varactor diode easy to connect in a circuit, making it a user-friendly choice for electronic design.

Package Style (Meter): LONG FORM

The long form package style provides better thermal performance and helps in dissipating heat effectively, ensuring the reliability of the varactor diode.

Terminal Position: AXIAL

Axial terminal position allows for easy soldering and connection, making it convenient for use in various electronic applications.

Case Connection: ISOLATED

Isolated case connection helps in preventing interference and ensures the safety and stability of the varactor diode in operation.

Maximum Power Dissipation: 0.25 W

The high maximum power dissipation rating allows the varactor diode to handle higher power levels, making it suitable for a wide range of applications.

Nominal Diode Capacitance: 7 pF

The nominal diode capacitance of 7 pF is ideal for tuning and frequency control applications, making it a versatile choice for various electronic circuits.

Minimum Breakdown Voltage: 20 V

The minimum breakdown voltage of 20 V ensures the safe operation of the varactor diode, protecting it from damaging voltage levels.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode allows for precise tuning and frequency control, making it suitable for applications requiring accurate signal processing.

Terminal Form: WIRE

Wire terminal form enables easy connection and soldering, making it convenient for use in various electronic projects and circuits.

Maximum Repetitive Peak Reverse Voltage: 20 V

The maximum repetitive peak reverse voltage of 20 V ensures the durability and reliability of the varactor diode under varying voltage conditions.

Diode Element Material: SILICON

The use of silicon diode element material provides good electrical properties and reliability, making it a stable choice for electronic applications.

Minimum Diode Capacitance Ratio: 2.2

Having a minimum diode capacitance ratio of 2.2 allows for a wider range of capacitance control, making the varactor diode versatile for different tuning applications.

Technical Specifications

Varactor Diodes TIV306 attributes and parameters. Explore more Varactor Diodes devices from Texas Instruments

Specs

Minimum Breakdown Voltage:

20 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

2.2

Nominal Diode Capacitance:

7 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-GALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TIV306 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-00-626-5037, 5961006265037

NIIN

006265037

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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