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TIV307

Texas Instruments

TIV307 by Texas Instruments

TIV307 by Texas Instruments is a Varactor Diode with 200 min Quality Factor, 9 pF Nominal Capacitance, and 20 V Breakdown Voltage. Ideal for RF applications due to its Variable Capacitance nature and 0.25 W Power Dissipation capability in an Axial package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,725 parts In-Stock

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Vyrian

USA . 2,558 parts In-Stock

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Semicontronic

India . 717 parts In-Stock

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$0.010

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$0.010

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$0.010

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717

$0.010

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$0.010

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Parana Technologies

USA . 810 parts In-Stock

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$0.026

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$1.415

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810

$0.026

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$1.415

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DigiPath Technology Company

USA . 1,862 parts In-Stock

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$0.028

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$0.026

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ChromeModa Solutions

Germany . 6,866 parts In-Stock

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$0.029

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$0.024

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IDEA Electronic Components Group

UK . 1,002 parts In-Stock

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$0.029

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$0.026

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1,002

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Ampacity Inc.

Singapore . 1,514 parts In-Stock

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$1.010

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One Stop Electronics

USA . 1,231 parts In-Stock

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AZTECH Wire

Italy . 494 parts In-Stock

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Corphita

USA . 3,333 parts In-Stock

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Corohmni

South Africa . 94 parts In-Stock

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Overview

Discover the TIV307 by Texas Instruments, a top-quality varactor diode that offers unmatched performance and reliability. With its manufacturer's reputation for excellence, this diode is perfect for a wide range of applications. Whether you're in the aerospace industry or working on telecommunications equipment, the TIV307 delivers exceptional value and benefits. Its high-quality factor and variable capacitance make it an essential component for any project. Trust Texas Instruments to provide you with the best in electronic components, and experience the advantages of the TIV307 firsthand.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor allows for greater stability and better performance in high-frequency applications.

Package Body Material: CERAMIC, GLASS-SEALED

Ceramic and glass-sealed packaging provides excellent protection for the diode, making it durable and reliable.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in various applications.

Package Shape: ROUND

Round shape allows for easier mounting and integration into circuit boards.

No. of Terminals: 2

Having only 2 terminals simplifies the connection and usage of the varactor diode.

Package Style (Meter): LONG FORM

Long form package style provides more space for heat dissipation, increasing the diode's power handling capability.

Terminal Position: AXIAL

Axial terminal position allows for easy horizontal insertion into circuit boards.

Case Connection: ISOLATED

Isolated case connection helps prevent interference and improves the overall performance of the diode.

Maximum Power Dissipation: 0.25 W

With a maximum power dissipation of 0.25W, this diode can handle relatively high power levels without overheating.

Nominal Diode Capacitance: 9 pF

The low nominal capacitance of 9pF allows for precise tuning and adjustments in RF circuits.

Minimum Breakdown Voltage: 20 V

The minimum breakdown voltage of 20V ensures that the diode can handle higher voltages without failing.

Diode Type: VARIABLE CAPACITANCE DIODE

Varactor diodes are specifically designed for variable capacitance applications, making them ideal for voltage-controlled oscillators and frequency modulation.

Terminal Form: WIRE

Wire terminal form allows for easy and secure connections in various circuit setups.

Maximum Repetitive Peak Reverse Voltage: 20 V

Having a maximum repetitive peak reverse voltage of 20V ensures the diode can withstand reverse voltage stress without damage.

Diode Element Material: SILICON

Silicon diode element material provides good performance characteristics and reliability in a variety of applications.

Minimum Diode Capacitance Ratio: 2.3

Having a minimum capacitance ratio of 2.3 allows for wide tuning range and flexibility in frequency modulation circuits.

Technical Specifications

Varactor Diodes TIV307 attributes and parameters. Explore more Varactor Diodes devices from Texas Instruments

Specs

Minimum Breakdown Voltage:

20 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

2.3

Nominal Diode Capacitance:

9 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

DO-35

JESD-30 Code:

O-GALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

20 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

TIV307 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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