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TIV25

Texas Instruments

TIV25 by Texas Instruments

TIV25 by Texas Instruments is a single varactor diode with 28pF capacitance, 30V breakdown voltage, and 80 min quality factor. Ideal for very high frequency applications due to its isolated case connection, 0.25W power dissipation, and silicon diode element material.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,243 parts In-Stock

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Digiode

USA . 2,452 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 517 parts In-Stock

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$0.010

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517

$0.010

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Parana Technologies

USA . 59 parts In-Stock

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$0.158

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$1.500

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59

$0.158

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$1.500

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DigiPath Technology Company

USA . 1,386 parts In-Stock

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$0.174

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$0.160

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1,386

$0.174

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ChromeModa Solutions

Germany . 1,492 parts In-Stock

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$0.178

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$0.146

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1,492

$0.178

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IDEA Electronic Components Group

UK . 652 parts In-Stock

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$0.178

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$0.160

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652

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One Stop Electronics

USA . 755 parts In-Stock

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$1.010

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755

$1.010

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Semicontronic

India . 497 parts In-Stock

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$1.010

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$0.985

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$0.980

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497

$1.010

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AZTECH Wire

Italy . 454 parts In-Stock

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$9.330

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Corphita

USA . 1,801 parts In-Stock

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Corohmni

South Africa . 380 parts In-Stock

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Overview

Unlock a world of possibilities with the TIV25 by Texas Instruments. As a leader in semiconductor technology, Texas Instruments guarantees top-notch quality and reliability. The TIV25 is a Varactor Diode that offers a minimum Quality Factor of 80, making it perfect for high-frequency applications. With its variable capacitance and high breakdown voltage, this diode provides unmatched performance. Whether you're designing RF filters or voltage-controlled oscillators, the TIV25 delivers the value and benefits you need to take your project to the next level. Trust Texas Instruments for superior components that exceed expectations.

Feature Benefit Bullets

Minimum Quality Factor: 80

High quality factor indicates good linearity and low losses, making this product suitable for high frequency applications.

Package Body Material: CERAMIC, GLASS-SEALED

Ceramic and glass-sealed packaging provides excellent protection and stability, ensuring reliable performance in various environmental conditions.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier to use in electronic devices.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, ensuring efficient signal processing and transmission.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into circuits.

No. of Terminals: 2

Two terminals provide simple connectivity and ease of use.

Package Style (Meter): LONG FORM

Long form package style allows for efficient heat dissipation and space-saving design.

Terminal Position: AXIAL

Axial terminal position enables easy and secure connections in circuit layouts.

Case Connection: ISOLATED

Isolated case connection helps prevent interference and allows for better performance in complex circuit setups.

Maximum Power Dissipation: 0.25 W

With a maximum power dissipation of 0.25W, this product can handle moderately high power levels without overheating.

Nominal Diode Capacitance: 28 pF

Nominal diode capacitance of 28 pF ensures fast response times and efficient signal processing.

Minimum Breakdown Voltage: 30 V

High minimum breakdown voltage of 30V provides protection against electrical surges and ensures durability.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode design allows for adjustable capacitance values, offering flexibility in circuit tuning and optimization.

Terminal Form: WIRE

Wire terminal form enables easy and secure connections in electronic circuits.

Maximum Repetitive Peak Reverse Voltage: 30 V

Maximum repetitive peak reverse voltage of 30V ensures reliable and stable operation in reverse-biased conditions.

Diode Element Material: SILICON

Silicon diode element material provides excellent performance characteristics and reliability in high frequency applications.

Minimum Diode Capacitance Ratio: 4.5

Minimum diode capacitance ratio of 4.5 allows for precise control and adjustment of capacitance values in circuit designs.

Technical Specifications

Varactor Diodes TIV25 attributes and parameters. Explore more Varactor Diodes devices from Texas Instruments

Specs

Additional Features:

AVAILABLE IN MATCHED SETS

Minimum Breakdown Voltage:

30 V

Case Connection:

ISOLATED

Config:

SINGLE

Minimum Diode Capacitance Ratio:

4.5

Nominal Diode Capacitance:

28 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

DO-34

JESD-30 Code:

O-GALF-W2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

CERAMIC, GLASS-SEALED

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Minimum Quality Factor:

80

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Form:

Terminal Position:

Trade Compliance

TIV25 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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