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SVD301

Onsemi

SVD301 by Onsemi

SVD301 by Onsemi is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. Featuring a nominal capacitance of 2.6 pF, it offers a min breakdown voltage of 27 V and max power dissipation of 0.2 W in a microwave package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,432 parts In-Stock

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Vyrian

USA . 1,409 parts In-Stock

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Benley Electronics

USA . 7 parts In-Stock

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TANS Electronics

Latvia . 5,883 parts In-Stock

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SupplyDigital Components

Austria . 4,117 parts In-Stock

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Problanco Electronics

Mexico . 3,029 parts In-Stock

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Corphita

USA . 2,300 parts In-Stock

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Kulean Microsystems

USA . 1,523 parts In-Stock

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UHIMA Technologies

Türkiye . 964 parts In-Stock

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Corohmni

South Africa . 165 parts In-Stock

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Overview

Unlock the power of innovation with the SVD301 Varactor Diode by Onsemi. Crafted with precision and expertise, this single configuration diode offers hyperabrupt variable capacitance classification in the X band frequency range. Ideal for a multitude of applications, this microwave surface mount diode boasts a maximum power dissipation of 0.2W and a minimum breakdown voltage of 27V. Experience unparalleled performance and reliability with the SVD301, providing customers with exceptional value and benefits for their electronic design needs. Elevate your projects with Onsemi's cutting-edge technology.

Feature Benefit Bullets

Config: SINGLE

Single configuration allows for easy implementation in various types of circuits and systems.

Variable Capacitance Diode Classification: HYPERABRUPT

Hyperabrupt diodes offer fast response times and precise control of capacitance, making them suitable for high-frequency applications.

Frequency Band: X BAND

X band frequency range is commonly used in radar, communication, and other high-frequency applications, making this diode suitable for such applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying assembly processes.

No. of Terminals: 2

Having 2 terminals simplifies the connection and integration of the diode into the circuit.

Package Style (Meter): MICROWAVE

Microwave package style ensures high performance at microwave frequencies, making this diode suitable for RF and microwave applications.

Maximum Power Dissipation: 0.2 W

High maximum power dissipation allows for reliable operation under high power conditions.

Nominal Diode Capacitance: 2.6 pF

Low nominal diode capacitance enables precise control of capacitance in circuits, particularly useful in tuning applications.

Minimum Breakdown Voltage: 27 V

High minimum breakdown voltage ensures the diode can withstand high voltages without failing, increasing reliability and longevity.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diodes offer flexible capacitance control, allowing for tunable circuits and frequency agility.

Terminal Form: FLAT

Flat terminals provide easy soldering and connection in PCB mounting, simplifying assembly processes.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage ensures the diode can handle reverse voltages without breaking down, improving reliability.

Diode Element Material: GALLIUM ARSENIDE

Gallium arsenide material provides high performance at high frequencies, making this diode suitable for RF and microwave applications.

Minimum Diode Capacitance Ratio: 17

High minimum diode capacitance ratio allows for wide tuning range and flexibility in capacitance control.

Technical Specifications

Varactor Diodes SVD301 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Minimum Breakdown Voltage:

27 V

Config:

SINGLE

Minimum Diode Capacitance Ratio:

17

Nominal Diode Capacitance:

2.6 pF

Diode Element Material:

GALLIUM ARSENIDE

Frequency Band:

X BAND

JESD-30 Code:

X-XXMW-F2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

MICROWAVE

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Form:

Terminal Position:

Variable Capacitance Diode Classification:

HYPERABRUPT

Trade Compliance

SVD301 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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